Mitigating parasitic absorption in Poly-Si contacts for TOPCon solar cells: A comprehensive review

被引:7
|
作者
Deng, Shuo [1 ]
Cai, Yalun [1 ]
Roemer, Udo [1 ]
Ma, Fa-Jun [1 ]
Rougieux, Fiacre [1 ]
Huang, Jialiang [1 ]
Cheng, Yuhao [1 ]
Green, Martin A. [1 ]
Song, Ning [1 ]
机构
[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW, Australia
关键词
Poly -Si contact; POLO; TOPCon; Absorption; Parasitic absorption; Local contact; Solar cell; Photovoltaics; Solar energy; PHOTOVOLTAIC ENERGY-CONVERSION; MIS TUNNEL-DIODES; SI/SIOX CONTACTS; EMITTER; PERFORMANCE; TRANSISTORS; DIFFUSION; BARRIER; LAYER; SIPOS;
D O I
10.1016/j.solmat.2024.112704
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Owing to their rapidly rising market share, TOPCon (poly-Si/SiOx passivating contact or POLO contact) solar cells, which are projected to surpass PERC as the dominant solar cell technology within the next decade. The TOPCon structure exhibits exceptional passivation and conductivity properties for both n+ and p + polarities, while also being compatible with conventional industrial production processes. However, a limit upon implementing poly-Si/SiOx passivated contacts is the potential for optical losses caused by parasitic absorption in the poly-Si layer, particularly when placed at the front of solar cells or at the back of bifacial solar cells in bifacial modules where light can be absorbed from both the front and the backside. This review paper provides a comprehensive review of innovations aiming to mitigate these losses. These include thinning, employing transparent conductive films, light element doping, and localizing poly-Si contacts. Through an exploration of these methods, the paper endeavours to offer valuable insights into optimizing the performance of solar cells utilizing the TOPCon structure.
引用
收藏
页数:13
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