Fabrication of low defect multi-layer graphene using electrochemical intercalation of graphite electrode and its application for graphene/ Al nanocomposites
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作者:
Hyo-Guk, U.
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Hyo-Guk, U.
[1
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Hong, Jang-Chon
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Hong, Jang-Chon
[1
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Kim, Su -Il
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Kim, Su -Il
[1
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Jang, Song-Guk
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Jang, Song-Guk
[1
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Ju, Yong-Chol
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Ju, Yong-Chol
[1
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Kim, Song-Chol
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Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North KoreaKim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Kim, Song-Chol
[1
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机构:
[1] Kim Il Sung Univ, High Tech Res & Dev Ctr, Pyongyang, North Korea
Low defect multi-layer graphene has been synthesized by electrochemical intercalation of graphite electrode in ammonium sulfate aqueous solution, followed by microwave heating and subsequent ultrasonication. Combination of addition of ethanol as antifoaming agent, alternating current and end-face electrolysis was very effective for high yield production (>75%) of low defect graphene. We applied as-synthesized graphene for graphene/Al composites using stir casting method. Graphene/Al composites with a graphene loading of 0.3% have approximately 40% higher tensile strength (142.2 MPa) and much lower coefficient of thermal expansion (19.8 x 10-6/K) as compared with pure Al (104.0 MPa, 22.7 x 10-6/K).
机构:
Univ Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, BrazilUniv Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, Brazil
Alaferdov, A. V.
Moshkalev, S. A.
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Univ Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, BrazilUniv Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, Brazil
Moshkalev, S. A.
Canesqui, M. A.
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Univ Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, BrazilUniv Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, Brazil
Canesqui, M. A.
Danilov, Y. A.
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Nizhnii Novgorod State Univ, PhysTech Res Inst, Novgorod R-603950, RussiaUniv Estadual Campinas, Ctr Semicond Components, BR-13083870 Sao Paulo, Brazil
Danilov, Y. A.
PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES,
2013,
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