Enhanced absorption of infrared light for quantum wells in coupled pillar-cavity arrays

被引:9
|
作者
Jiang, Xin-yang [1 ,2 ]
Liu, Wei-wei [1 ]
Li, Tian-xin [1 ]
Hui, Xia [1 ]
Deng, Wei-jie [1 ,2 ]
LI, Yu [1 ,2 ]
Li, Yu-ying [1 ]
Wei, Lu [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
基金
中国国家自然科学基金;
关键词
SILICON NANOWIRE; OPTICAL-ABSORPTION; SOLAR-CELLS; BROAD-BAND; WAVE-GUIDE; ANTIREFLECTION; GAAS; PHOTODETECTORS; PHOTOCURRENT; EFFICIENCY;
D O I
10.1364/OE.479106
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Periodic pillars of semiconductor in sub-wavelength size can serve multiple roles as diffracting, trapping and absorbing light for effective photoelectric conversion which has been intensively studied in the visible range. Here, we design and fabricate the micro-pillar arrays of AlGaAs/GaAs multi quantum wells(QWs) for high performance detection of long wavelength infrared light. Compared to its planar counterpart, the array offers 5.1 times intensified absorption at peak wavelength of 8.7 mu m with 4 times shrinked electrical area. It's illustrated by simulation that the normal incident light is guided in the pillars by HE11 resonant cavity mode to form strengthened Ez electrical field, which enables the inter-subband transition of n-type QWs. Moreover, the thick active region of dielectric cavity that contains 50 periods of QWs with fairly low doping concentration will be beneficial to the optical and electrical merits of the detectors. This study demonstrates an inclusive scheme to substantially raise the signal to ratio of infrared detection with all-semiconductor photonic structures.(c) 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:7090 / 7102
页数:13
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