Formation mechanism and regulation of silicon vacancycenters in polycrystalline diamond films br

被引:3
|
作者
Li, Jun-Peng [1 ,2 ]
Ren, Ze-Yang [1 ,2 ]
Zhang, Jin-Feng [1 ,2 ]
Wang, Han-Xue [1 ]
Ma, Yuan-Chen [1 ,2 ]
Fei, Yi-Fan [1 ,2 ]
Huang, Si-Yuan [1 ,2 ]
Ding, Sen-Chuan [1 ]
Zhang, Jin-Cheng [1 ]
Hao, Yue [1 ]
机构
[1] Xidian Univ, Natl Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Peoples R China
[2] Xidian Univ, Wuhu Res Inst, Wuhu 241002, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
diamond; silicon vacancy center; photoluminescence; Raman spectroscopy; COLOR-CENTERS; LUMINESCENCE CENTER; SI; RAMAN; PHOTOLUMINESCENCE; SPECTRA; SPIN;
D O I
10.7498/aps.72.20221437
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Diamond silicon vacancy centers (SiV centers) have important application prospects in quantuminformation technology and biomarkers. In this work, the formation mechanism and regulation method of SiVcenter during the growth of polycrystalline diamond on silicon substrate are studied. By changing the ratio ofnitrogen content to oxygen content in the growing atmosphere of diamond, the photoluminescence intensity ofSiV center can be controlled effectively, and polycrystalline diamond samples with the ratios of SiV centerphotoluminescence peak to diamond intrinsic peak as high as 334.46 and as low as 1.48 are prepared. It is foundthat nitrogen promotes the formation of SiV center in the growth process, and the inhibition of oxygen. Thesurface morphology and photoluminescence spectrum for each of these samples show that the photoluminescencepeak intensity of SiV center is positively correlated with the grain size of diamond, and the SiV center'sphotoluminescence peak in the diamond film with obvious preferred orientation of crystal plane is higher. Thedistribution of Si centers and SiV centers on the surface of polycrystalline diamond are further characterizedand analyzed by photoluminescence, Raman surface scanning and depth scanning spectroscopy. It is found thatduring the growth of polycrystalline diamond, the substrate silicon diffuses first into the diamond grain andthen into the crystal structure to form the SiV center. This paper provides a theoretical basis for thedevelopment and application of SiV centers in diamond
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页数:9
相关论文
共 34 条
  • [1] Diamond Nanophotonics
    Aharonovich, Igor
    Neu, Elke
    [J]. ADVANCED OPTICAL MATERIALS, 2014, 2 (10): : 911 - 928
  • [2] Quantum nanophotonics with group IV defects in diamond
    Bradac, Carlo
    Gao, Weibo
    Forneris, Jacopo
    Trusheim, Matthew E.
    Aharonovich, Igor
    [J]. NATURE COMMUNICATIONS, 2019, 10 (1)
  • [3] Dobrinets I. A., 2013, HPHT TREATED DIAMOND, V181
  • [4] Influence of the growth temperature on the Si-V photoluminescence in diamond thin films
    Dragounova, Katerina
    Izak, Tibor
    Kromka, Alexander
    Potucek, Zdenek
    Bryknar, Zdenek
    Potocky, Stepan
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 124 (03):
  • [5] CHARACTERISTICS AND ORIGIN OF THE 1.681 EV LUMINESCENCE CENTER IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    FENG, T
    SCHWARTZ, BD
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) : 1415 - 1425
  • [6] Origin of the 1150-cm-1 Raman mode in nanocrystalline diamond -: art. no. 121405
    Ferrari, AC
    Robertson, J
    [J]. PHYSICAL REVIEW B, 2001, 63 (12)
  • [7] Interpretation of Raman spectra of disordered and amorphous carbon
    Ferrari, AC
    Robertson, J
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 14095 - 14107
  • [8] Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon
    Ferrari, AC
    Robertson, J
    [J]. PHYSICAL REVIEW B, 2001, 64 (07)
  • [9] Si and N - Vacancy color centers in discrete diamond nanoparticles: Raman and fluorescence spectroscopic studies
    Ganesan, K.
    Ajikumar, P. K.
    Ilango, S.
    Mangamma, G.
    Dhara, S.
    [J]. DIAMOND AND RELATED MATERIALS, 2019, 92 : 150 - 158
  • [10] Goss J P, PHYS REV LETT