GaN/AlGaN Solid-State Traveling-Wave Amplifier (SSTWA) Operating at W-Band

被引：1

作者：

Anastasiadis, Michail O. O. ^{[1
]}

Akhiyat, Abe A. A. ^{[1
]}

Grisafe, Benjamin ^{[2
]}

Pavlidis, Dimitris ^{[1
]}

Volakis, John L. L. ^{[1
]}

机构：

[1] Florida Int Univ, Coll Engn & Comp, Miami, FL 33174 USA

[2] Northrop Grumman Corp, Baltimore, MD 21090 USA

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 07期

关键词：

mm-Wave amplifiers; plasma-wave devices; traveling-wave solid-state amplifiers; DRIFTING CARRIERS; AMPLIFICATION; SEMICONDUCTORS; HEMTS;

D O I：

10.1109/LMWT.2023.3265353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we report on the first experimental demonstration of a solid-state traveling-wave amplifier (SSTWA) based on a GaN/AlGaN superlattice heterostructure. The device employs a coplanar waveguide loaded with interdigitated electrodes that couple the RF wave to the drifting electrons confined in a 2-D electron gas (2-DEG). The amplifier is designed and validated with electromagnetic (EM) simulations to demonstrate amplification at W-band and under room temperature. Two-port measurements of the fabricated traveling-wave device revealed an electronic gain of similar to 22 dB/mm at 80 GHz for an 8.3-mu m-long channel.

引用

页码：1027 / 1030

页数：4

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