Deposition of stoichiometry - tailored amorphous Cu-S thin films by MOCVD technique

Deposition technique and associated deposition parameters play significant roles in determining the stoichiometry of thin films, and consequently, their properties. Herein, Cu-S thin films were deposited on a sodalime glass substrate via metal organic chemical vapour deposition (MOCVD) at temperatures between 350 and 450 degrees C using a single solid source precursor. The deposited Cu-S films were characterized using Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectrophotometry, and four-point probe technique. RBS characterization revealed that the films are non-stoichiometry while thickness increased from 480 to 655 nm as deposition temperature increased. SEM revealed micrographs that are temperature-dependent. A direct band gap value between 2.75 and 3.80 eV was obtained as the deposition temperature increased. Electrical characterization showed ohmic characteristics in which, resistivity decreased from 18.50 x 10(-3) omega cm to 8.20 x 10(-3 )omega cm as deposition temperature increased.