Mitigating disorder-induced zero-energy states in weakly coupled superconductor-semiconductor hybrid systems

被引:8
|
作者
Awoga, Oladunjoye A. [1 ]
Leijnse, Martin [1 ]
Black-Schaffer, Annica M. [2 ]
Cayao, Jorge [2 ]
机构
[1] Lund Univ, Solid State Phys & NanoLund, Box 118, S-22100 Lund, Sweden
[2] Uppsala Univ, Dept Phys & Astron, Box 516, S-75120 Uppsala, Sweden
基金
瑞典研究理事会; 欧洲研究理事会;
关键词
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I
10.1103/PhysRevB.107.184519
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Disorder has appeared as one of the main mechanisms to induce topologically trivial zero-energy states in superconductor-semiconductor systems, thereby challenging the detection of topological superconductivity and Majorana bound states. Here, we demonstrate that, for disorder in any part of the system, the formation of disorder-induced trivial zero-energy states can, to a large extent, be mitigated by keeping the coupling between the semiconductor and superconductor weak. The only exception is strong disorder in the semiconductor, where instead the strong-coupling regime is somewhat more robust against disorder. Furthermore, we find that the topo-logical phase in this weak-coupling regime is robust against disorder, with a large and well-defined topological gap which is highly beneficial for topological protection. Our work shows the advantages and disadvantages of weak and strong couplings under disorder, important for designing superconductor-semiconductor hybrid structures.
引用
收藏
页数:10
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