L10 FeNi: a promising material for next generation permanent magnets

被引:15
|
作者
Mandal, Shuvam [1 ,2 ]
Debata, Mayadhar [1 ,2 ]
Sengupta, Pradyut [1 ,3 ]
Basu, Suddhasatwa [1 ,4 ]
机构
[1] CSIR, Inst Minerals & Mat Technol, Bhubaneswar 751013, India
[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India
[3] Indian Inst Technol Kharagpur, Dept Met & Mat Engn, Kharagpur 721302, W Bengal, India
[4] Indian Inst Technol Delhi, Dept Chem Engn, New Delhi 110016, India
关键词
Rare-earth free permanent magnets; L1(0) FeNi; high magnetic anisotropy; high energy product; meteorites; nature-inspired materials; PHASE-FORMATION; NI SYSTEM; IRON; TETRATAENITE; FILMS; METAL; TETRAGONALITY; FABRICATION; CHONDRITES; ANISOTROPY;
D O I
10.1080/10408436.2022.2107484
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Permanent magnets (PM) find widespread application in energy conversion, telecommunication, data storage, sensors, electronic gadgets, etc. Even though the market for PM is dominated by rare earth (RE) based magnets like Nd-Fe-B and Sm-Co, the recent crisis of RE elements and supply constraints have evoked the necessity of new PM materials for sustainable development. Owing to the predicted high value of (BH)(max), the abundant availability of constituent elements (Fe, Ni), and presence in natural meteorites, L1(0) FeNi has drawn the attraction of the scientific community. Therefore, in this article, L1(0) FeNi (tetrataenite) is extensively reviewed as one of the most suitable candidates for future permanent magnetic material. Although L1(0) FeNi has shown immense potential for PM application due to its high magnetocrystalline anisotropy and magnetic saturation, the bulk synthesis of this material is not yet achieved. The problems in laboratory synthesis of L1(0) FeNi and the technological limitations for practical use are dominated by the slow diffusion of Ni in the FeNi lattice around the low order-disorder temperature (similar to 593 K). Artificial techniques with a low-temperature synthesis of ordered L1(0) FeNi are highlighted and the properties of L1(0) FeNi thin films are also presented coherently.
引用
收藏
页码:703 / 725
页数:23
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