Buried Interface-The Key Issues for High Performance Inverted Perovskite Solar Cells

被引:12
|
作者
Yan, Nan [1 ]
Fang, Zhimin [1 ,2 ]
Dai, Zhonghua [1 ,3 ]
Feng, Jiangshan [1 ]
Liu, Shengzhong [1 ,4 ]
机构
[1] Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Shaanxi Key Lab Adv Energy Devices, Key Lab Appl Surface & Colloid Chem,Sch Mat Sci &, Xian 710119, Peoples R China
[2] Yangzhou Univ, Inst Technol Carbon Neutralizat, Yangzhou 225127, Jiangsu, Peoples R China
[3] Shanxi Univ, Sch Elect Power Civil Engn & Architecture, Sch Phys & Elect Engn, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
[4] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, iChEM, Dalian 116023, Peoples R China
基金
中国国家自然科学基金;
关键词
buried interface; defects; hole transport layer; inverted perovskite solar cell; modification; ORGANOMETAL TRIHALIDE PEROVSKITE; SOLUTION-PROCESSED PEROVSKITE; POWER CONVERSION EFFICIENCY; HOLE TRANSPORT MATERIALS; BAND-GAP PEROVSKITES; NICKEL-OXIDE; DIFFUSION LENGTHS; MONOLAYER MODIFICATION; HALIDE PEROVSKITES; CHARGE EXTRACTION;
D O I
10.1002/adfm.202314039
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Interface engineering is known for effectively improving interfacial contact and passivating defects to enhance device performance of inverted perovskite solar cells (PSCs). Currently, most of works focus on surface passivation, while the buried interface is equally important. The film quality of perovskite layer greatly relies on the buried interface, leaving a pronounced impact on overall device performance. In addition, resolving defects and energy level mismatch at buried interface remains challenging. Optimizing the buried interface becomes a promising approach for high-efficiency inverted PSCs. This review summarizes recent advances in buried interface engineering and emphasize the importance of corresponding characterization techniques. The various functions of buried interface engineering are carefully discussed, including crystallization modulation, defect passivation, energy level alignment, chemical reaction inhibition, chemical bridge, dipole cancellation and novel buried interfacial techniques. Finally, current challenges and prospects are put forward that should be addressed to further improve device performance of inverted PSCs. This review summarizes recent advances in buried interface engineering and emphasize the importance of corresponding characterization techniques. The various functions of buried interface engineering are carefully discussed, including crystallization modulation, defect passivation, energy level alignment, chemical reaction inhibition, chemical bridge, dipole cancellation, and novel buried interfacial techniques. Finally, current challenges and prospects are put forwarded that should be addressed to further improve device performance of inverted PSCs. image
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页数:27
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