Design of a broadband GaN 12 W power amplifier

被引：0
|
作者：
Fan, Ze [1 ]
Mou, Shouxian [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu 611731, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2023年 / 65卷 / 07期
关键词：
0.15-mu m gallium nitride technology; broadband; high power amplifier; MMIC; GHZ;
D O I：
10.1002/mop.33667
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact broadband 12 W power amplifier with broadband matching networks is presented. Transistors connected in parallel are used to synthesize the high power. Input, interstage, and output matching networks are also properly designed to meet the requirement of the broadband application. The broadband high power amplifier (HPA) was fabricated using a 0.15-mu m gallium nitride (GaN) HEMT technology, with a maximum saturated measured output power of 43 dBm from 6 to 18 GHz. The measured power added efficiency exceeds 20% in the whole interested band. The proposed HPA also has a compact size of 3.1 mm x 2.96 mm.
引用
收藏
页码：1968 / 1973
页数：6
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