Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

被引：1
|
作者：
Saleem, Muhammad Farooq [1 ]
Ashraf, Ghulam Abbas [2 ]
Iqbal, Muhammad Faisal [3 ]
Khan, Rashid [4 ]
Javid, Muhammad [5 ]
Wang, Tianwu [1 ]
机构：
[1] Chinese Acad Sci, GBA Branch Aerosp Informat Res Inst, Guangzhou 510530, Peoples R China
[2] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Zhejiang, Peoples R China
[3] Riphah Int Univ, Dept Phys, Faisalabad 38000, Pakistan
[4] Zhejiang Univ, Coll Chem & Biol Engn, Zhejiang Prov Key Lab Adv Chem Engn Manufacture Te, Hangzhou 310027, Peoples R China
[5] Hangzhou Dianzi Univ, Inst Adv Magnet Mat, Coll Mat & Environm Engn, Hangzhou 310012, Peoples R China
来源：
INTERNATIONAL JOURNAL OF OPTICS | 2023年 / 2023卷
基金：
中国国家自然科学基金;
关键词：
FEMTOSECOND OPTICAL PULSES; THZ EMISSION; GENERATION; RECTIFICATION; FUNDAMENTALS; SPECTROSCOPY; RADIATION; HOLE;
D O I：
10.1155/2023/5619799
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.
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页数：10
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