Crystal step edges with alternating rows of growth units: 1D nucleation and step velocity

被引:3
|
作者
Joswiak, Mark N. [1 ]
Peters, Baron [2 ,3 ,4 ]
Doherty, Michael F. [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA
[2] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[4] Dept Chem & Biomol Engn, 600 S Mathews Ave 292 RAL, MC-712, Urbana, IL 61801 USA
关键词
A1; Nucleation; Growth models; Computer simulation; Surface processes; KINK DENSITY; MODEL; DISSOLUTION; MOVEMENT; KINETICS; KOSSEL; NACL;
D O I
10.1016/j.jcrysgro.2022.127042
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Crystals with asymmetric growth units present a ubiquitous challenge for modeling crystal growth. We derive the crystal step edge velocity for steps with alternating rows of growth units (i.e., a row of A followed by a row of B growth units). We construct a free energy model for 1D nucleation of this two-tiered row and show that a single anisotropic interaction parameter and the supersaturation characterize the edge stability. A Fokker-Planck model captures the kinetics of nucleation and seamlessly connects the stable and unstable regimes, whereas previous models diverge near the transition between these cases. The 1D nucleation model leads to an expression that predicts the step velocity as a function of supersaturation and edge stability. We show that the model is in excellent agreement with kinetic Monte Carlo simulations.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Simulation of kinetically limited nucleation and growth at monatomic step edges
    Stephens, Ryan M.
    Alkire, Richard C.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (08) : D418 - D426
  • [2] Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth
    Krzyzewski, F.
    Zaluska-Kotur, M.
    Krasteva, A.
    Popova, H.
    Tonchev, V.
    JOURNAL OF CRYSTAL GROWTH, 2017, 474 : 135 - 139
  • [3] Two-step nucleation and crystal growth in a metastable solution
    Alexandrov, Dmitri V.
    Makoveeva, Eugenya V.
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (23)
  • [4] Growth phenomena in the surface layer and step generation from the crystal edges
    Zaitseva, N
    Smolsky, I
    Carman, L
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (1-2) : 249 - 262
  • [5] New approach to modeling nucleation, crystal growth, and the Ostwald step rule
    Steefel, Carl
    Stack, Andrew
    Yang, Li
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2016, 251
  • [6] Selective growth of monoatomic Cu rows at step edges on Si(111) substrates in ultralow-dissolved-oxygen water
    Tokuda, N., 1600, Japan Society of Applied Physics (44): : 16 - 19
  • [7] Selective growth of monoatomic Cu rows at step edges on Si(111) substrates in ultralow-dissolved-oxygen water
    Tokuda, N
    Nishizawa, M
    Miki, K
    Yamasaki, S
    Hasunuma, R
    Yamabe, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L613 - L615
  • [8] Nucleation along step edges during Si epitaxial growth on the Si(111)surface observed by STM
    Fujita, K
    Kusumi, Y
    Ichikawa, M
    SURFACE SCIENCE, 1997, 380 (01) : 66 - 74
  • [9] Single-step generation of 1D FeCo nanostructures
    Sedrpooshan, Mehran
    Ternero, Pau
    Bulbucan, Claudiu
    Burke, Adam M.
    Messing, Maria E.
    Westerstroem, Rasmus
    NANO EXPRESS, 2024, 5 (02):
  • [10] Step-step interactions and correlations from 1D hard-core boson mapping
    Santoro, G
    Laio, A
    Tosatti, E
    SURFACE SCIENCE, 1998, 402 (1-3) : 880 - 885