Incubating High-Quality Perovskite Film via Facial Mask Technique for Efficient and Stable Solar Cells

被引:4
|
作者
Tang, Senlin [1 ,2 ]
Zhao, Lian [1 ,2 ]
Li, Hongxiang [3 ]
Zong, Jiawei [1 ,2 ]
Zhu, Zheng [1 ,2 ]
Peng, Ying [1 ,2 ]
Yang, Hua [4 ,5 ]
Chen, Runfeng [1 ,2 ]
Li, Mingguang [1 ,2 ]
机构
[1] Nanjing Univ Posts & Telecommun, State Key Lab Organ Elect & Informat Displays, 9 Wenyuan Rd, Nanjing 210023, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Inst Adv Mat IAM, 9 Wenyuan Rd, Nanjing 210023, Peoples R China
[3] Sichuan Univ, Coll Polymer Sci & Engn, State Key Lab Polymer Mat Engn, Chengdu 610065, Peoples R China
[4] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[5] Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
efficiency; facial mask incubation techniques; perovskite growth manipulations; solar cells; surface modifications; CRYSTALLIZATION; PASSIVATION; MORPHOLOGY;
D O I
10.1002/adfm.202210417
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
High-performance perovskite film with superior internal and surface qualities is critical for perovskite solar cells (PSCs) but hardly achievable due to the rapid crystallization rate of perovskite itself. Herein, a novel technique by in situ manipulating perovskite crystal growth and modifying the surface properties is developed using organic passivating agent-assisted polydimethylsiloxane membrane as a facial mask (FM) of perovskites. By placing the perovskite-precursor films with their faces toward the designed FM during thermal annealing, a favorable microenvironment is constructed for incubating high-quality perovskite films with smooth surface, enhanced vertical orientation of (100) plane, and well-adjusted interfacial energy levels. With this versatile FM incubation technique, efficient PSCs for both methylammonium (MA)-based and formamidinium (FA)-MA-Cs mixed perovskite systems are facilely fabricated, delivering excellent humidity/thermal stabilities and promising efficiencies up to 21.4% with an improved open-circuit voltage of 1.15 V in MA-based devices. This work not only provides a facile and efficient approach to rationally manage the perovskite growth process, but also reveals the fundamental characteristics of high-quality perovskite films comprehensively for the construction of efficient and stable PSCs.
引用
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页数:9
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