IGZO Phototransistor with Ultrahigh Sensitivity at Broad Spectrum Range (450-950 nm) Realized by Incorporating PM6:Y6 Bulk Heterojunction

被引:0
|
作者
Ko, Hyung Min [1 ]
Yang, Seok Joo [2 ]
Jeung, Jinpyeo [1 ]
Park, Hyuk [1 ]
Seo, Taewon [1 ]
Kim, Seung-Mo [1 ]
Lee, Byoung Hun [1 ,3 ]
Cho, Kilwon [2 ]
Chung, Yoonyoung [1 ,3 ]
机构
[1] Pohang Univ Sci & Technol POSTECH, Dept Elect Engn, Pohang 37673, Gyeongbuk, South Korea
[2] Pohang Univ Sci & Technol POSTECH, Dept Chem Engn, Pohang 37673, Gyeongbuk, South Korea
[3] Pohang Univ Sci & Technol POSTECH, Ctr Semicond Technol Convergence, Dept Semicond Engn, Pohang 37673, Gyeongbuk, South Korea
基金
新加坡国家研究基金会;
关键词
IGZO; non-fullerene acceptor; organic bulk heterojunction; oxide semiconductor; phototransistor; PM6:Y6; THIN-FILM TRANSISTORS; HIGH-EFFICIENCY;
D O I
10.1002/adom.202303152
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Among various photoresponsive materials, organic materials have gained interest due to their low cost, large-scale yields, and compatibility with flexible substrates. However, their low photoresponsivity compared to inorganic counterparts has been consistently pointed out as a limitation. To address this issue, a highly photoresponsive PM6:Y6/IGZO hybrid phototransistor is presented with a broad spectral range of 450-950 nm. The photoresponse of the device is enhanced by controlling the PM6:Y6 blending ratio, active layer thickness, and solvent additive treatment. The PM6:Y6 blending ratio and thickness are optimized to promote charge separation and efficient charge transport, leading to a significant increase in photoresponsivity. Moreover, solvent additives are employed to improve the crystallinity of the PM6:Y6 film, which further enhanced the charge transport. As a result, the PM6:Y6/IGZO hybrid phototransistor exhibited exceptional performance, with an ultrahigh photoresponsivity of 2.2 x 10(8) A W-1 and specific detectivity of 9.8 x 10(16 )Jones under 750 nm light with an intensity of only 1.03 nW cm(-2). These results highlight the potential of organic materials in developing high-performance phototransistors.
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页数:8
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