Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

被引：1

作者：

Deuschle, Leonard ^{[1
]}

Backman, Jonathan ^{[1
]}

Luisier, Mathieu ^{[1
]}

Cao, Jiang ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

基金：

瑞士国家科学基金会;

关键词：

CNT; Auger recombination; NEGF; GW;

D O I：

10.23919/SISPAD57422.2023.10319647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-consistent GW approximation. Motivated by the characteristic enhancement of interaction between charge carriers in one-dimensional systems, we show that the developed framework can predict Auger recombination, hot carrier relaxation, and impact ionization in this type of nanostructures. Using the computed scattering rates, we infer the inverse electron-hole pair lifetimes for different Auger processes in several device configurations.

引用

页码：297 / 300

页数：4

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