Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism

被引：0

作者：

Fuchibe, Yuta ^{[1
]}

Sakata, Shuichi ^{[1
]}

Komatsuzaki, Yuji ^{[1
]}

Shinjo, Shintaro ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa, Japan

来源：

2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC | 2023年

关键词：

Digital-to-analog converter; GaN; digital RF; transmitter architecture; low power consumption; fabrication;

D O I：

10.1109/APMC57107.2023.10439847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converters (DACs). This topology utilizes the method of turning on a high-side GaN transistor in a bridge configuration, with Charge Reuse Transistor Control Mechanism. Using this method, an RP DACs can be realized with downsizing the circuit scale and facilitating a multi-bit RP DACs. The proposed topology related to 1-bit conversion is experimentally verified by fabricating a module using GaN HEMTs. Additionally, a simulation with a practical device model confirms that our topology succeeds in realizing 3-bit conversion.

引用

页码：86 / 88

页数：3