Excited-State Descriptors for High-Throughput Screening of Efficient Electro-Fluorescent Materials

被引:5
|
作者
Yu, Ze [1 ,2 ]
Li, Qiuying [1 ,2 ]
Ma, Qian [1 ,2 ]
Ye, Wenpeng [1 ,2 ]
An, Zhongfu [1 ,2 ]
Ma, Huili [1 ,2 ]
机构
[1] Nanjing Tech Univ NanjingTech, State Key Lab Flexible Elect KLOFE, Nanjing 211816, Peoples R China
[2] Nanjing Tech Univ NanjingTech, Inst Adv Mat IAM, Nanjing 211816, Peoples R China
基金
中国国家自然科学基金;
关键词
LIGHT-EMITTING-DIODES; ENERGY-GAP LAW; TRIPLET-STATES; ELECTROLUMINESCENCE; SINGLET; DESIGN;
D O I
10.1021/acs.chemmater.3c00033
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Electro-fluorescent materials with 100% internal quantum efficiency (IQE) and short fluorescence lifetimes (tau f, similar to ns) are desirable and achievable by harvesting high-lying triplet excitons. However, the IQE governed by exciton utilization efficiency (EUE) and photoluminescence quantum yield (PLQY) remains low. Herein, from the electro-fluorescence process involving triplet excitons and energy gap law, we established two excited-state descriptors (triplet-triplet energy gap Delta ETT and oscillator strengthf) to characterize EUE, PLQY and tau f, by taking a series of hot exciton compounds as prototypes. Subsequently, these descriptors were employed to perform high-throughput screening of over 5000 fluorophores, predicting 19 candidate molecules with a high IQE (>90%). We stressed that the large values of these descriptors are conducive to high EUE and PLQY and short tau f. This work presents a guideline to design and screen efficient electro-fluorescent materials beyond the spin-statistical limit.
引用
收藏
页码:1827 / 1833
页数:7
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