Switching Performance Assessment of Bilayer PtSe2 Tunneling Field Effect Transistor

In this article, a bilayer tunneling FET based on the stacked structure of platinum diselenide (PtSe2) monolayers is introduced. A p-type PtSe2 layer acts as the source region, while the drain region is composed of a passivated PtSe2 layer, that acts as a n-type layer. The switching performance of the device is investigated by the numerical simulations utilizing first principles calculations based on density functional theory (DFT). The study is carried out for different passivation atoms at different locations, and the results show that remarkable switching characteristics including subthreshold swing (SS) of about 21 mV/dec, ON-state current of about 880 mu A/mu m, and on/off currents ratio of about 10(6) are achievable. Such an impressive results indicate that the bilayer PtSe2 tunnel field effect transistor (TFET) is among the promising low-voltage transition metal dichalcogenide (TMD)-based switching devices.