First-Principles Investigation of Electronic and Related Properties of Cubic Magnesium Silicide (Mg2Si)

被引:2
|
作者
Dioum, Alle [1 ]
Diakite, Yacouba I. I. [2 ]
Malozovsky, Yuiry [3 ]
Ayirizia, Blaise Awola [4 ]
Beye, Aboubaker Chedikh [1 ]
Bagayoko, Diola [3 ]
机构
[1] Cheikh Anta Diop Univ UCAD, Dept Phys, Mat & Composite Syst & Applicat MASCA, BP 5005, Dakar, Senegal
[2] Univ Sci Tech & Technol Bamako, Coll Sci & Tech CST, Ctr Calculat Modeling & Simulat CCMS, Dept Studies & Res DSR Phys, BP 3206, Bamako, Mali
[3] Southern Univ & A&M Coll, Dept Math & Phys, Baton Rouge, LA 70813 USA
[4] Univ Texas El Paso, Coll Sci, Computat Sci Program, El Paso, TX 79902 USA
基金
美国国家科学基金会;
关键词
density functional theory (DFT); second DFT theorem; band gap; density of states; effective masses; bulk modulus; OPTICAL-PROPERTIES; BAND-STRUCTURE; MG2GE; SI; GE;
D O I
10.3390/computation11020040
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
We present results from ab initio, self-consistent calculations of electronic, transport, and bulk properties of cubic magnesium silicide (Mg2Si). We employed a local density approximation (LDA) potential to perform the computation, following the Bagayoko, Zhao, and Williams (BZW) method, as improved by Ekuma and Franklin (BZW-EF). The BZW-EF method guarantees the attainment of the ground state as well as the avoidance of over-complete basis sets. The ground state electronic energies, total and partial densities of states, effective masses, and the bulk modulus are investigated. As per the calculated band structures, cubic Mg2Si has an indirect band gap of 0.896 eV, from Gamma to X, for the room temperature experimental lattice constant of 6.338 angstrom. This is in reasonable agreement with the experimental value of 0.8 eV, unlike previous ab initio DFT results of 0.5 eV or less. The predicted zero temperature band gap of 0.965 eV, from Gamma to X, is obtained for the computationally determined equilibrium lattice constant of 6.218 angstrom. The calculated value of the bulk modulus of Mg2Si is 58.58 GPa, in excellent agreement with the experimental value of 57.03 +/- 2 GPa.
引用
收藏
页数:14
相关论文
共 50 条
  • [1] Investigation of the magnesium silicide -: Mg2Si films
    Kamilov, T. S.
    Kabilov, D. K.
    Kamilova, R. Kh.
    Azimov, M. E.
    Klechkovskaya, V. V.
    Orekhov, A. S.
    Suvorova, E. I.
    ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS, 2006, : 468 - +
  • [2] First-principles calculation of electronic structure and optical properties of Mg2Si with doping
    College of Science, Guizhou University, Guiyang 550025, China
    不详
    Guangxue Xuebao, 2009, 1 (229-235):
  • [4] First-principles calculations of electronic structure and optical properties of strained Mg2Si
    Chen Qian
    Xie Quan
    Zhao FengJuan
    Cui DongMeng
    Li XuZhen
    CHINESE SCIENCE BULLETIN, 2010, 55 (21): : 2236 - 2242
  • [5] First-Principles Calculation of Electronic Structure of Mg2Si with Doping
    Chen Qian
    Xie Quan
    Zhao Feng-Juan
    Cui Dong-Meng
    Li Xu-Zhen
    2009 INTERNATIONAL FORUM ON INFORMATION TECHNOLOGY AND APPLICATIONS, VOL 1, PROCEEDINGS, 2009, : 338 - 341
  • [6] Mg2Si Silicide under Pressure: First-Principles Evolution Search Results
    Lunyakov, Yu. V.
    PHYSICS OF THE SOLID STATE, 2020, 62 (05) : 880 - 884
  • [7] Mg2Si Silicide under Pressure: First-Principles Evolution Search Results
    Yu. V. Lunyakov
    Physics of the Solid State, 2020, 62 : 880 - 884
  • [8] First-principles Calculations on the Electronic Structure and Optical Properties of Mg2Si Epitaxial on Si (111)
    Chen, Qian
    Xie, Quan
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 134 - 137
  • [9] Modeling of Thermoelectric Properties of Magnesium Silicide (Mg2Si)
    Nikhil Satyala
    Daryoosh Vashaee
    Journal of Electronic Materials, 2012, 41 : 1785 - 1791
  • [10] Modeling of Thermoelectric Properties of Magnesium Silicide (Mg2Si)
    Satyala, Nikhil
    Vashaee, Daryoosh
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) : 1785 - 1791