Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films

被引:7
|
作者
Gao, Shuangyin [1 ]
Huang, Yi [1 ]
Tan, Jin [1 ]
Xu, Jianmei [1 ]
Zhao, Ling [1 ]
Zhou, Wei [1 ]
Yang, Zhihong [1 ]
Sun, Jian [1 ]
Gong, Hao [2 ]
机构
[1] China Univ Geosci, Fac Mat Sci & Chem, Wuhan 430074, Peoples R China
[2] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117543, Singapore
基金
中国国家自然科学基金;
关键词
electrostatic spinning; amorphous Cu-based MOF films; infrared photodetector; self-powered photodetector; flexible photodetector; METAL-ORGANIC FRAMEWORK; GROWTH; FABRICATION; FILTERS; STATES;
D O I
10.1021/acsami.3c05121
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous metal-organic frameworks (aMOFs) startto challengetheir crystalline equivalents due to their unique advantages, likelack of grain boundaries, isotropy, flexibility, numerous defects-inducedactive sites, etc. However, aMOFs are typically synthesized underrigorous conditions, and their properties and applications need tobe further explored. In this work, highly transparent p-type amorphousCu-HHTP films consisting of Cu2+ and 2,3,6,7,10,11-hexahydroxytriphenylene(HHTP) were synthesized using a simple electrostatic spinning methodand identified as p-a-Cu-HHTP. Besides, a p-a-Cu-HHTP/n-Si infraredphotodetector (PD) operating on a self-powered basis with ultra-highspeed (response time of 40 & mu;s) and detectivity (1.2 x 10(12) Jones) has been developed, with a response time and detectivitythat are record values for a MOF-based photodetector. In particular,the p-a-Cu-HHTP/n-Si PD can withstand high temperatures up to 180 & DEG;C without property change. Moreover, a flexible metal-semiconductor-metalphotodetector based on p-a-Cu-HHTP is constructed, which shows excellentmechanical stability and photoresponse that remain unchanged afterbending 120 times, implying its suitability for wearable optoelectronics.The new method to fabricate aMOFs, the unique p-a-Cu-HHTP, and itsPDs initiated in this work opens up a new avenue in organic-inorganichybrid optoelectronics.
引用
收藏
页码:32637 / 32646
页数:10
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