Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing

被引：2

作者：

Iwaya, T. ^{[1
]}

Ichikawa, S. ^{[1
,2
]}

Timmerman, D. ^{[1
]}

Tatebayashi, J. ^{[1
]}

Fujiwara, Y. ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Osaka 5650871, Japan

[2] Osaka Univ, Res Ctr Ultrahigh Voltage Electron Microscopy, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 03期

关键词：

EMITTING-DIODES; IONS; EMISSION; GREEN; BLUE;

D O I：

10.1063/5.0136880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence efficiency of Eu-related emission from Eu, O-codoped GaN (GaN:Eu, O) strongly depends on the local structure of Eu ions. Growth at relatively low temperature (-960 degrees C) not only enables high Eu doping concentration but also elevates Eu-clustering due to its low diffusion coefficient, which results in formation of a large number of inefficient luminescent sites. We have studied the impact of post growth thermal annealing at high temperatures on elimination of Eu clusters by photoluminescence measurements. These clarify that thermal annealing at high temperatures induces changes in the structural conformation and converts inefficient luminescent sites to efficient ones. As a result, the sample annealed at 1100 degrees C shows increased luminescence efficiency with a maximum of 5.1 times that of the as-grown sample. Post-growth thermal annealing offers a way to improve the efficiency of GaN:Eu, O further for practical application in III-nitride based monolithic three-primary colors' light-emitting diodes.

引用

页数：5