Front-side and back-side secondary ion mass spectrometry analyses on advanced doping processes for ultra-large scale integrated circuit: A case study

被引：1

作者：

Qin, Shu ^{[1
]}

机构：

[1] QinTek Co, Hopkinton, MA 01748 USA

来源：

THIN SOLID FILMS | 2023年 / 766卷

关键词：

Plasma immersion ion implantation; Front-side secondary ion mass spectrometry; Sputtering; re-deposition; Ion knock-in; End-of-range defects; Back-side secondary ion mass spectrometry; DEVICE PERFORMANCE IMPROVEMENT; IMPLANTATION; FABRICATION; BORON; SIMS;

D O I：

10.1016/j.tsf.2022.139654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The issues caused by the artifacts of sputtering/re-deposition and ion knock-in effects of the conventional front -side secondary ion mass spectrometry (SIMS) measurement are extensively investigated. Back-side SIMS mea-surement is used to confirm these hypotheses and resolve these issues. Based on back-side SIMS data, plasma immersion ion implantation (PIII) processed wafers show superior junction characteristics and less damages than beamline (BL)-based implant processed wafers, including shallower junction depth (58.9 nm vs. 64.2 nm), similar junction abruptness (9.0 nm/dec vs. 8.7 nm/dec), and less end-of-range defects. They are opposite to the misleading conclusions that front-side SIMS data provided. A better electrical performance by PIII processed device than that by BL-based implant processed device is demonstrated.

引用

页数：6