Growth of α-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition

The heteroepitaxial growth of In2O3 on a (0001) alpha-Al2O3 substrate was carried out using the mist chemical vapor deposition method. The concentrations of In2O3 powder in the source precursor solution varied between 0.025 and 0.250 mol l(-1). An increase in the growth rate was observed with the increasing In2O3 powder concentration, and the highest growth rate of 4.2 mu m h(-1) was obtained at a powder concentration of 0.150 mol l(-1). An improvement in the electrical properties was eventually observed, i.e. the lowest carrier concentration of 3.1 x 10(17) cm(-3) and the highest Hall mobility of 241 cm(2) V-1 s(-1) at room temperature were obtained at a powder concentration of 0.150 mol l(-1). The temperaturedependent Hall effect measurement for the sample showed pronounced carrier freeze-out in a temperature range of 300-30 K, indicating that the a-In2O3 film had near-non-degenerate conductivity.