Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

被引：5

作者：

Kaltsounis, Thomas ^{[1
,2
]}

Haas, Helge ^{[1
]}

Lafossas, Matthieu ^{[1
]}

Torrengo, Simona ^{[1
]}

Maurya, Vishwajeet ^{[1
]}

Buckley, Julien ^{[1
]}

Mariolle, Denis ^{[1
]}

Veillerot, Marc ^{[1
]}

Gueugnot, Alain ^{[1
]}

Mendizabal, Laurent ^{[1
]}

Cordier, Yvon ^{[2
]}

Charles, Matthew ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

[2] Univ Cote Azur, CNRS, CRHEA, F-06560 Valbonne, France

来源：

MICROELECTRONIC ENGINEERING | 2023年 / 273卷

关键词：

Localized epitaxy; GaN-on-Si; Unintentional doping; Scanning spreading resistance microscopy; POWER ELECTRONICS; PERFORMANCE;

D O I：

10.1016/j.mee.2023.111964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving material compatible with 1200 V vertical devices, in particular an unintentional doping level <1 x 1016 cm-3, which is essential to have high quality devices. In this study, three mask materials (SiN, SiO2, Al2O3) are examined and the unintentional doping concentration in GaN layers grown by metal organic vapor phase epitaxy (MOVPE) is investigated by scanning spreading resistance microscopy (SSRM). The results from SSRM are verified by sec-ondary ions mass spectroscopy (SIMS) and show that an unintentional doping concentration lower than 1016 cm-3 is achieved when Al2O3 is used as the mask material. This value is lower than any previous studies of localized GaN growth, and in addition, this is the first time that SSRM has been used to observe such low doping concentrations in GaN.

引用

页数：5

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