Study on Measurement Discontinuity during On-wafer TRL Calibration of 28FD-SOI Devices upto 110GHz

被引：0

作者：

Pradeep, Karthi ^{[1
,2
]}

Fregonese, Sebastien ^{[1
]}

Deng, Marina ^{[1
]}

Dormieu, Benjamin ^{[2
]}

Scheer, Patrick ^{[2
]}

Zimmer, Thomas ^{[1
]}

机构：

[1] Univ Bordeaux, IMS Lab, Talence, France

[2] STMicroelectronics, Crolles, France

来源：

2023 100TH ARFTG MICROWAVE MEASUREMENT CONFERENCE, ARFTG | 2023年

关键词：

RF characterization; 28FD-SOI; on-wafer TRL; small signal model; electromagnetic simulation;

D O I：

10.1109/ARFTG56062.2023.10148879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study analyses the effect of test structure design for on-wafer TRL calibration of 28nm FD-SOI MOSFETs upto 110 GHz. Two different calibration kits are designed with and without continuous ground plane and their effect on the extracted transistor parameters are studied in terms of the measurement discontinuities encountered. Measurement results are discussed in conjunction with electromagnetic (EM) co-simulations, which use the small-signal equivalent circuit model of transistor along with the 3D models of the probes and test structures. The electric field coupling between the probes is visualised in each case and conclusions are drawn.

引用

页数：5

共 3 条

[1] 220GHz on-wafer measurement based on TRL calibration method
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PROCEEDINGS OF 2015 IEEE 12TH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS (ICEMI), VOL. 2, 2015, : 868 - 871
[2] An improved method for determination of extrinsic resistances for HEMT devices based on 110 GHz S-parameters on-wafer measurement
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[3] Coupling on-wafer measurement errors and their impact on calibration and de-embedding up to 110 GHz for CMOS millimeter wave characterizations
Andrei, C.
Gloria, D.
Danneville, F.
Scheer, P.
Dambrine, G.
2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS, 2007, : 253 - +

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