Direct observation of room-temperature high-level triplet-triplet annihilation process in 1%rubrene-doped OLEDs with a CzDBA sensitizer

被引:1
|
作者
Tang, Xiantong [1 ]
Pan, Ruiheng [1 ]
Guan, Xinyi [1 ]
He, Yanjun [1 ]
Jiang, Sha [1 ]
Wang, Yongjie [1 ]
Zhou, Xianju [1 ]
Xiong, Zuhong [2 ]
机构
[1] Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400715, Peoples R China
[2] Southwest Univ, Sch Phys Sci & Technol, MOE, Key Lab Luminescence & Real Time Anal, Chongqing 400715, Peoples R China
基金
中国国家自然科学基金;
关键词
MAGNETO-ELECTROLUMINESCENCE; SINGLET-FISSION; ENERGY-TRANSFER; CONVERSION; DOPANT; EFFICIENT; FORSTER; RUBRENE; FUSION; ORIGIN;
D O I
10.1063/5.0185064
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the magneto-electroluminescence as a sensitive and fingerprint probing tool, a "hot exciton" channel, named the high-level triplet-triplet annihilation (HL-TTA or T(2)T(2)A, T-2 + T-2 -> S-n -> S-1 -> S-0 + hv) process from the high-lying triplet (T-2) to the lowest singlet states, is observed in 1%rubrene-doped organic light-emitting diodes with a thermally activated delayed fluorescence sensitizer of 9,10-bis(4-(9H-carbazol-9-yl)-2,6-dimethylphenyl)-9,10-diboraanthracene (CzDBA) at room temperature. The addition of a sensitizer simultaneously promotes the Dexter energy transfer channels of host-sensitizer and sensitizer-guest triplets, thereby increasing the amounts of T-2 states and inducing the occurrence of the HL-TTA process. Additionally, the HL-TTA enhances with the increase in the bias current and decreases with lowering the working temperature, which is consistent with the current dependence of the conventional low-level TTA (T(1)T(1)A, T-1 + T-1 -> S-1 + S-0) process but contrary to its temperature dependence. More interestingly, the high concentration of CzDBA induces the H-type aggregation of rubrene molecules, promoting the singlet fission process but suppressing the HL-TTA process. These findings enrich the physical understanding of hot exciton channels and provide ideas for the preparation of high-performance devices.
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页数:6
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