High fracture toughness in van der Waals-layered MoTe2: Disappearance of stress singularity

被引:2
|
作者
Hirakata, Hiroyuki [1 ]
Akiyoshi, Masao [1 ,2 ]
Masuda, Ryoichi [1 ]
Shimada, Takahiro [1 ]
机构
[1] Kyoto Univ, Dept Mech Engn & Sci, Nishikyo Ku, Kyoto 6158540, Japan
[2] Mitsubishi Electr Corp, Wadasaki Cho, Hyogo Ku, Kobe, Hyogo 6520854, Japan
关键词
Fracture toughness; Stress singularity; 2D materials; van der Waals-layered materials; MoTe2; STRENGTH;
D O I
10.1016/j.engfracmech.2022.108974
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
In this study, we demonstrated that van der Waals-layered MoTe2 , where two-dimensional atomic layers are closely laminated by weak interactions, has higher fracture toughness in out-of-plane cracks than that in in-plane cracks owing to structural anisotropy. In situ electron microscopy fracture toughness tests were performed on micro-sized specimens. The apparent fracture toughness of the out-of-plane crack based on the continuum assumption was approximately twice that of the in-plane crack. In the out-of-plane crack specimen, as the loading progressed, inter -laminar slip occurred between layers, and this discrete nature caused the stress singularity to disappear, leading to high fracture toughness.
引用
收藏
页数:19
相关论文
共 50 条
  • [1] Ferroelectric valley valves with graphene/MoTe2 van der Waals heterostructures
    Fumega, Adolfo O.
    Lado, Jose L.
    NANOSCALE, 2023, 15 (05) : 2181 - 2187
  • [2] VAN-DER-WAALS EPITAXY OF THIN INSE FILMS ON MOTE2
    SCHLAF, R
    TIEFENBACHER, S
    LANG, O
    PETTENKOFER, C
    JAEGERMANN, W
    SURFACE SCIENCE, 1994, 303 (1-2) : L343 - L347
  • [3] MoTe2/InN van der Waals heterostructures for gas sensors: a DFT study
    Mehrez, Jaafar Abdul-Aziz
    Chen, Xiyu
    Zeng, Min
    Yang, Jianhua
    Hu, Nantao
    Wang, Tao
    Liu, Ruili
    Xu, Lin
    Gonzalez-Alfaro, Yorexis
    Yang, Zhi
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (42) : 28677 - 28690
  • [4] Tunable electronic and optical properties of arsenene/MoTe2 van der Waals heterostructures
    Liu, Jiangtao
    Xue, Mengmeng
    Wang, Jianli
    Sheng, Haohao
    Tang, Gang
    Zhang, Junting
    Bai, Dongmei
    VACUUM, 2019, 163 : 128 - 134
  • [5] Constructing trifunctional MoTe2/As van der Waals heterostructures for versatile energy applications
    Chang, Yee Hui Robin
    Yeoh, Keat Hoe
    Jiang, Junke
    Lim, Thong Leng
    Yong, Yik Seng
    Low, Lay Chen
    Tuh, Moi Hua
    NEW JOURNAL OF CHEMISTRY, 2022, 46 (42) : 20172 - 20181
  • [6] Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems
    Ye, Fan
    Islam, Arnob
    Wang, Yanan
    Guo, Jing
    Feng, Philip X. -L.
    SMALL, 2023, 19 (05)
  • [7] Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
    Balaji, Yashwanth
    Smets, Quentin
    De La Rosa, Cesar Javier Lockhart
    Lu, Anh Khoa Augustin
    Chiappe, Daniele
    Agarwal, Tarun
    Lin, Dennis H. C.
    Huyghebaert, Cedric
    Radu, Iuliana
    Mocuta, Dan
    Groeseneken, Guido
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 1048 - 1055
  • [8] Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
    Balaji, Yashwanth
    Smets, Quentin
    de la Rosa, Cesar J. Lockhart
    Lu, Anh Khoa Augustin
    Chiappe, Daniele
    Agarwal, Tarun
    Lin, Dennis
    Huyghebaert, Cedric
    Radu, Iuliana
    Mocuta, Dan
    Groeseneken, Guido
    2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2017, : 106 - 109
  • [9] A type-I van der Waals heterobilayer of WSe2/MoTe2
    Li, Ming
    Bellus, Matthew Z.
    Dai, Jun
    Ma, Liang
    Li, Xiuling
    Zhao, Hui
    Zeng, Xiao Cheng
    NANOTECHNOLOGY, 2018, 29 (33)
  • [10] Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures
    Tang, Wei
    Liu, Haoliang
    Li, Zhe
    Pan, Anlian
    Zeng, Yu-Jia
    ADVANCED SCIENCE, 2021, 8 (18)