interstitial diffusion;
vacancy diffusion;
battery-like electrode;
H+ ion transport rate;
supercapacitor;
DENSITY ASYMMETRIC SUPERCAPACITORS;
METAL-ORGANIC FRAMEWORKS;
HIGH-ENERGY DENSITY;
HYBRID FILM;
NANOBELTS;
STORAGE;
HETEROSTRUCTURE;
NANOCOMPOSITES;
NANOSHEETS;
INTERFACE;
D O I:
10.1021/acsaem.3c01398
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Battery-type materials have been identified as highlypromisingelectrode materials for supercapacitors due to their high theoreticalcapacitance. However, their substantially lower practical capacitanceis due to their poor electrode kinetics, which severely restrict theusage of redox-active regions on the electrode surface. To addressthis issue, the oxygen-vacancy-abundant Co-MoO3-x microsphere structure is used as a representativeexample to explore the interstitial diffusion and vacancy diffusionkinetics by adjusting the internal crystal structure, ultimately achievingan accelerated H+ ion transport rate. First-principlessimulations show that the defect structure in Co-MoO3-x , which originates from Co 3d orbitals and is generatedclose to the Fermi level, can modulate the electronic states. Theprepared asymmetric supercapacitor device using Co-MoO3-x exhibits a very high specific capacitance of 167.7C/g at 1 A/g, a high energy density of 30.2 Wh/kg at a power densityof 865 W/kg, and an excellent capacitance retention of 82.1% after5000 cycles in H2SO4 electrolyte. This researchdemonstrates the potential for internal crystal structure adjustmentto enhance the performance of electrode materials, especially battery-likeelectrode materials, for high-performance supercapacitors.
机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Zhao, Fangyuan
Chen, Yao
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机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Chen, Yao
Shi, Guohua
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机构:
Weihai CNG New Mat Technolgy R&D Co Ltd, Weihai 264299, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Shi, Guohua
Liu, Qiying
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机构:
Weihai CNG New Mat Technolgy R&D Co Ltd, Weihai 264299, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Liu, Qiying
Liu, Yong
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机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Shanxi Zheda Inst Adv Mat & Chem Engn, Taiyuan 030001, Shanxi, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Liu, Yong
Han, Gaorong
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机构:
Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
Zhejiang Univ, Ningbo Innovat Ctr, Ningbo 315100, Peoples R ChinaZhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310058, Peoples R China
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Gao, Yuan
Lin, Yuanjing
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Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Lin, Yuanjing
Peng, Zehua
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机构:
Hong Kong Polytech Univ, Inst Text & Clothing, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Peng, Zehua
Zhou, Qingfeng
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机构:
Hefei Univ Technol, Sch Comp & Informat, Hefei, Anhui, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Zhou, Qingfeng
Fan, Zhiyong
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机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China