Multi-factors-regulated multi-level down-scalable and robust memristors

被引：2
|
作者：
Mao, Shuangsuo [1 ]
Cao, Zelin [2 ]
Zheng, Xingrong [3 ]
Zhou, Guangdong [4 ]
Qin, Jiajia [1 ]
Yang, Yusheng [1 ]
Liu, Mingnan [1 ]
Rao, Zhaowei [1 ]
Zhao, Yong [1 ,5 ,6 ]
Sun, Bai [2 ]
机构：
[1] Fujian Normal Univ, Coll Phys & Energy, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Fujian, Peoples R China
[2] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol FIST, Xian 710049, Shaanxi, Peoples R China
[3] Longdong Univ, Coll New Energy, Dept Phys, Qingyang 745000, Gansu, Peoples R China
[4] Southwest Univ, Coll Artificial Intelligence Brain Inspired Comp &, Chongqing Key Lab, Chongqing 400715, Peoples R China
[5] Southwest Jiaotong Univ, Superconduct & New Energy R&D Ctr, Minist Educ, Chengdu 610031, Sichuan, Peoples R China
[6] Southwest Jiaotong Univ, Key Lab Magnet Suspens Technol & Maglev Vehicle, Minist Educ, Chengdu 610031, Sichuan, Peoples R China
来源：
MATERIALS TODAY CHEMISTRY | 2024年 / 35卷
基金：
中国国家自然科学基金;
关键词：
Resistive switching; Working mechanism; Multi-factors regulated; Conductive filaments; Multi-level memory; NEGATIVE DIFFERENTIAL RESISTANCE; BEHAVIOR;
D O I：
10.1016/j.mtchem.2023.101876
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The memristor based on resistive switching (RS) behavior has attracted extensive attention due to its wide application prospects in artificial intelligence (AI) and information memory. In this work, a multi-factor responsive memristor based on Ag/MnO2/F-doped tin oxide (FTO) sandwich structure was fabricated by magnetic sputtering method. It was found that the RS behavior of the device was significantly improved when the diameter of the top electrode decreased from 2.0 mm to 0.5 mm, indicating that the device with Ag/MnO2/FTO structure has the down-scalable potential. Through comprehensive research, it can be concluded that the bipolar RS behavior of the memristor can be adjusted by multi-factors such as active layer thickness, top electrode size, voltage scanning rate, bias voltage amplitude and temperature. Specifically, the resistance-temperature dependence and temperature coefficient of the device in the low resistance state (LRS) indicate that the formation and disconnection of metallic Ag conductive filaments (CFs) play an important role in the RS behavior of the memristive device. Therefore, this work will lay an experimental and theoretical foundation for comprehensively understanding the mechanism of RS behavior and developing high-performance memristor with multi-level memory capacity.
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收藏
页数：12
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