A reluctance-based electromagnetic transient model for the Sen Transformer with inter-turn fault

被引:2
|
作者
Li, Wei [1 ]
Han, Song [1 ]
Guo, Xi [2 ]
Xie, Shufan [3 ]
Rong, Na [1 ]
机构
[1] Guizhou Univ, Dept Elect Engn, Guiyang 550025, Guizhou, Peoples R China
[2] State Grid Shaanxi Elect Power Co, Weinan Power Supply Co, Weinan 714000, Shaanxi, Peoples R China
[3] Beijing Elect Power Co State Grid, Construct Engn & Consultat Branch Elect Power, Beijing 100021, Peoples R China
关键词
Sen Transformer; Electromagnetic transient model; Inter-turn fault; J-A hysteresis model; Leakage reluctance; UNIFIED POWER-FLOW; JILES-ATHERTON; FINITE-ELEMENT; UPFC;
D O I
10.1016/j.ijepes.2023.109606
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to analyze the electromagnetic characteristics of the Sen Transformer (ST) in the event of an inter-turn fault (ITF), an electromagnetic transient model of the ST with ITF based on reluctance is proposed in this paper. Firstly, the magnetic equivalent circuit model of the ST with ITF is established based on the magnetic coupling relationship among the internal windings of the ST with ITF. Secondly, the electrical analytical model for the current in each winding of the ST with ITF is derived from the electrical connection established the ST with ITF and the external system. Finally, the electromagnetic transient model of the ST with ITF can be obtained by combining the magnetic equivalent circuit model with the electrical analytical model. The J-A hysteresis model is employed for representing the saturation characteristics of the iron core and the hysteresis effects. Meanwhile, an energy method is used to calculate the leakage reluctance between the windings. Three case studies have been conducted with the assistance of MATLAB and ANSYS/Maxwell. The results of the analytical calculations are compared with the time-domain simulation to verify the validity of the model. Furthermore, the growth of the current in the fault phase is significant after an ITF occurs in the ST, while the growths of the currents in the nonfault phases are very small. Moreover, the effects of the number of fault turns and the fault location on the current in the ST with ITF are further analyzed.
引用
收藏
页数:14
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