Facile synthesis of crack-free single-crystalline Al-doped Co-free Ni-rich cathode material for lithium-ion batteries

被引:6
|
作者
Liu, Qi [1 ]
Wu, Zhenqian [1 ]
Sun, Jingying [2 ]
Xu, Ruimei [2 ]
Li, Xianwei [1 ]
Yu, Xiao [1 ]
Liu, Yong [1 ]
机构
[1] Sun Yat sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[2] Sun Yat sen Univ, Instrumental Anal & Res Ctr, Guangzhou 510275, Peoples R China
基金
中国国家自然科学基金;
关键词
Lithium-ion batteries; Co-free cathode material; Al dopant; Single-crystal; Chelation; SYNTHESIS STRATEGY; CYCLE STABILITY; COBALT; PERFORMANCE; CHEMISTRY;
D O I
10.1016/j.electacta.2022.141473
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Co-free, Ni-rich cathode materials have aroused enormous attentions for the low cost, sustainable development of lithium-ion batteries. However, it is not easy to fabricate single-crystalline Ni-rich cathode materials from the hierarchical structured precursors via coprecipitation method. Furthermore, it is difficult to introduce Al dopant during the coprecipitation process to obtain high quality Ni-rich cathode material owing to the rapid sediment of Al3+. Herein, we developed a one-step stirring-assisted cation chelation and reassembly route for fabricating crack-free single-crystalline, Al-doped Co-free Ni-rich cathode material. The fabricated LiNi0.8Mn0.16Al0.04O2 shows a high capacity of 204 mAh g-1 at 0.1C, excellent rate capability (143 mAh g-1 at 10C), and good cycling stability (an initial specific capacity of 178 mAh g-1 with capacity retention of 82.2% at 1C over 200 cycles). Furthermore, when tested at a raised temperature of 55 degrees C, it exhibited an initial capacity of 194.7 mAh g-1 with capacity retention of 82.1% at 1C over 100 cycles. The outstanding electrochemical performance can be ascribed to the synergistic effect of single crystalline structure and successful doping of Al element in the cathode, which enable fast ion and electron transport, suppress Li/Ni mixing and maintain the structural stability.
引用
收藏
页数:10
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