Investigation and optimisation of a lithium-drift silicon detector using Si-Li structure and bidirectional diffusion and drift techniques

The research relevance is predefined by the continuous development and improvement of radiation analysis methods and the need for more efficient and accurate detectors for various applications. This research may improve the sensitivity and resolution of Si(Li) detectors, which is important for scientific and industrial research as well as radiation safety monitoring. The research aims to analyse and improve the performance of a Si(Li) lithium-drift silicon detector. The methods used include an analytical method, classification method, functional method, statistical method, synthesis method and others. The results of the two-sided observation of lithium diffusion in silicon monocrystals provided valuable information about the characteristics of the process and its dependence on the method of silicon production. A large-diameter detector detection mode was found to be important for optimising the production of such detectors. The diffusion process in monocrystalline silicon produced by the shadowless zone melting method is relatively fast. This means that lithium ions penetrate the material rapidly and spread evenly throughout its volume. This fast diffusion process can be useful for detectors that need to respond quickly to incoming signals. It was found that in monocrystalline silicon produced by the Czochralski method, there is a delayed penetration of lithium ions.