Search Method of Robust Gate Driving Vectors for Digital Gate Drivers With Low Test Cost Against Load Current and Temperature Variations in IGBTs

被引:1
|
作者
Wang, Ting-Wei [1 ]
Inuma, Toshiaki [2 ]
Chen, Po-Hung [1 ]
Takamiya, Makoto [2 ]
机构
[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
关键词
Gate driver; insulated gate bipolar transistor (IGBT); load current; robustness; temperature; SWITCHING PATTERN; SIC MOSFET; PROTECTION; IMPROVEMENT; OVERSHOOT; CIRCUIT; VOLTAGE; DI/DT;
D O I
10.1109/TPEL.2023.3279674
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A digital gate driver with active gate driving is effective in solving the tradeoff between switching loss and current/voltage overshoot of power devices. However, the optimum gate driving vector (GV) for a digital gate driver is temperature- and load current-dependent. When an optimum GV at a particular operating condition is reused to another, the switching performance sometimes becomes worse than the conventional gate drive (Sai et al. 2019). Therefore, robust gate driving vectors (RGVs) against temperature and load current variation are required (Sai et al. 2019). Nevertheless, the test cost of searching for an RGV is very high. In order to reduce the test cost, search methods of RGV with fewer required measurements are proposed in this article. Single-step GV and stop-and-go GV are selected as the type of RGV for turn-on and turn-off, respectively. Compared with the conventional search method of RGV in Sai et al. 2019 and Wang et al. 2020, the proposed search method can reduce the measurement time by 99% and 92%, respectively. Furthermore, when the RGV and the optimum GV at a single condition are reused to other operating conditions, the maximum overall f(OBJ) of RGV is lower than that of the single condition optimum GV, which shows that the searched RGV has better robustness.
引用
收藏
页码:10669 / 10679
页数:11
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