Atomic layer deposition of ?-Al2O3 from trimethylaluminum and H2O: Effect of process parameters and plasma excitation on structure development

Aluminum oxide (Al2O3) thin films were deposited from trimethylaluminum (TMA) and H2O on Si substrates and alpha-Cr2O3 seed layers using thermal and plasma-assisted atomic layer deposition (ALD). All films deposited on Si were amorphous. On the alpha-Cr2O3 seed layers, alpha-Al2O3 was formed at temperatures >= 350 degrees C in the thermal ALD and at >= 325 degrees C in the plasma-assisted ALD processes. The Ar plasma used in the experiments most significantly contributed to crystallization when applied during the purge period following the H2O pulse or during the H2O pulse and the following purge. Application of plasma during the TMA pulse, during the purge following the TMA pulse, or only during the H2O pulse suppressed the crystal growth and could potentially be applied as a crystal growth inhibitor.