ZrAlxOy high-k dielectrics for MIM decoupling capacitors in the BEOL

被引：3

作者：

Falidas, Konstantinos ^{[1
]}

Mertens, Konstantin ^{[1
]}

Everding, Maximilian ^{[1
]}

Czernohorsky, Malte ^{[1
]}

Heitmann, Johannes ^{[2
]}

机构：

[1] Fraunhofer IPMS, CNT, Dresden, Germany

[2] Tech Univ Bergakad Freiberg, Inst Appl Phys, Freiberg, Germany

来源：

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年

关键词：

D O I：

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A material, electrical and reliability study of MIM decoupling capacitors placed in the BEOL of 300mm wafers using Al2O3-doped ZrO2 dielectric thin films is reported. By using two aluminum contents (7.8% and 13.1%) within thin (< 10nm) ZrO2 dielectric films, the capacitance density of up to 25.7 fF/mu m(2) with field linearity of 592 ppm/(MV/cm)(2) at 10kHz was achieved. J- E curves and dielectric breakdown characteristics at temperatures from 25 degrees C to 150 degrees C were investigated. Low leakage current (<0.1 mu A/cm(2)) was achieved up to 200 degrees C for both Al contents. Further, reliability measurements were carried out over temperature (25-175 degrees C). Capacitors reached more than 300 years of extrapolated lifetime for the 13.1% Al content within ZrO2 at 150 degrees C and up to more than 400 years of lifetime for both Al contents at 25 degrees C.

引用

页数：2

共 50 条

[1] Wide band frequency characterization of high permittivity dielectrics (High-K) for RF MIM capacitors integrated in BEOL
Lacrevaz, T.
Flechet, B.
Farcy, A.
Torres, J.
Vo, T. T.
Bermond, C.
Cueto, O.
Defay, E.
Gros-Jean, M.
Blampey, B.
Angenieux, G.
Piquet, J.
de Crecy, F.
PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 78 - +
[2] MIM capacitors using amorphous high-k PrTixOy dielectrics
Wenger, C
Sorge, R
Schroeder, T
Mane, AU
Lippert, G
Lupina, G
Dabrowski, J
Zaumseil, P
Muessig, HJ
MICROELECTRONIC ENGINEERING, 2005, 80 : 313 - 316
[3] EFFECT OF FREQUENCY ON RELIABILITY OF High-K MIM CAPACITORS
Federspiel, X.
Griffon, A.
Barlas, M.
Lamontagne, P.
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, 2023,
[4] Modeling the voltage nonlinearity of high-k MIM capacitors
Kannadassan, D.
Karthik, R.
Baghini, Maryam Shojaei
Mallick, P. S.
SOLID-STATE ELECTRONICS, 2014, 91 : 112 - 117
[5] RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
Chen, SB
Lai, CH
Chin, A
Hsieh, JC
Liu, J
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 201 - 204
[6] High-density RF MIM capacitors using high-k La2O3 dielectrics
Yang, MY
Yu, DS
Chin, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (07) : F162 - F165
[7] Group-II Hafnate and Zirconate High-k Dielectrics for MIM Storage Capacitors in DRAM: the Defect Issue
Dabrowski, J.
Dudek, P.
Kozlowski, G.
Lupina, G.
Lippert, G.
Schmidt, R.
Walczyk, Ch.
Wenger, Ch.
PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, 2009, 25 (06): : 219 - 239
[8] Dielectric Relaxation, Aging and Recovery in High-K MIM Capacitors
Holden, Konner E. K.
Hall, Gavin D. R.
Cook, Michael
Kendrick, Chris
Pabst, Kaitlyn
Greenwood, Bruce
Daugherty, Robin
Gambino, Jeff P.
Allman, Derryl D. J.
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
[9] Carbon nanotube capacitors arrays using high-k dielectrics
Choi, Y.
Mosley, L. E.
Min, Y.
Amaratunga, G. A. J.
DIAMOND AND RELATED MATERIALS, 2010, 19 (2-3) : 221 - 224
[10] Topographic Complexities and Solutions for High Density BEOL MIM Capacitors
Cheng, L.
Kakita, S.
Fox, R.
Motoyama, E.
Lee, J.
Azad, N.
Hart, G.
Ham, S.
Sharma, A.
Beaudoin, F.
Zhang, G. W.
de la Garza, E. G.
Babighian, P.
Wang, T.
Yang, X.
Augur, R.
Tang, T. J.
SEMICONDUCTOR PROCESS INTEGRATION 10, 2017, 80 (04): : 233 - 237

← 1 2 3 4 5 →