Unveiling Sb3+ Doping and Tricolor Luminescence from Intrinsic Self-Trapped Excitons in Cs2ZnCl4 Crystals

被引:2
|
作者
Zhang, Wenxia [1 ]
Chen, Guanghao [1 ]
Lu, Xianghua [2 ]
Wang, Yuchan [3 ]
Zhang, Nan [1 ]
Zhang, Qian [1 ]
Liu, Xiaoyu [4 ]
Tang, Xiaosheng [1 ]
机构
[1] Chongqing Univ Posts & Telecommun, Sch Optoelect Engn, Chongqing 400065, Peoples R China
[2] BOE HC SemiTek Corp, Yiwu 322009, Zhejiang, Peoples R China
[3] Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
[4] Natl Innovat Inst Def Technol, Innovat Lab Terahertz Biophys, Beijing 100071, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2024年 / 15卷 / 09期
基金
中国国家自然科学基金;
关键词
EMISSION;
D O I
10.1021/acs.jpclett.4c00090
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Zero-dimensional (0D) lead-free halide perovskites have lately received significant interest owing to their captivating broadband emissions. An in-depth understanding of the luminescence mechanism of self-trapped excitons (STEs) and realization of effective regulation of luminescence properties have become a major challenge in the research of lead-free metal halides. Herein, we have synthesized the Cs(2)ZnCl(4 )and Sb3+-doped Cs(2)ZnCl(4 )crystals and conducted a comprehensive investigation into their distinct electronic structures and optical characteristics. The findings from both experimental and theoretical investigations indicate that the tricolor luminescence in Cs(2)ZnCl(4 )and blue emission in Sb3+-doped Cs(2)ZnCl(4 )stem from intrinsic STEs, and the near-infrared emission originates from extrinsic STEs associated with the Sb3+ ion in Sb3+-doped Cs2ZnCl4. Sb3+ doping increases the quantum yield of Cs(2)ZnCl(4 )to a large extent. In addition, intersystem crossing, exciton self-trapping, and lattice relaxation are the main reasons for the large Stokes shift. The present study is expected to provide a novel perspective for researchers in comprehending the luminescent mechanism of STEs and advancing the utilization of 0D lead-free metal halides in optoelectronic applications.
引用
收藏
页码:2616 / 2623
页数:8
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