Mobile defects as mediated states for charge-carrier trapping in metal halide perovskites quantum dots

被引:0
|
作者
Liu, Xiao-Yi [1 ]
Li, Wei-Ping [2 ]
Cui, Yu [1 ]
Li, Shao-Juan [3 ]
Yang, Ran-Bo [1 ]
Li, Zhi-Qing [1 ]
Wang, Zi-Wu [1 ]
机构
[1] Tianjin Univ, Sch Sci, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing Te, Tianjin 300354, Peoples R China
[2] Tianjin Sino German Univ Appl Sci, Dept Basic Courses, Tianjin 300350, Peoples R China
[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
基金
中国国家自然科学基金;
关键词
ION MIGRATION; RECOMBINATION; PHYSICS; TOLERANCE;
D O I
10.1063/5.0140911
中图分类号
O59 [应用物理学];
学科分类号
摘要
The migration motion of defects in metal halide perovskites' quantum dots (MHPQDs) results in charge-carrier trapping which has become more complicated. We study two-step trapping mediated by mobile defects between the ground state of MHPQDs and a fixed-depth defect using a full-configuration defect method, where all possible trapping processes mediated by these mobile defects could be reproduced and the fastest channels among them are picked out. We find that these two-step trapping processes could keep more one order of magnitude faster than these direct ones as mobile defects with the appropriate localization strength, which implies that these indirect trapping should play the crucial rule to determine the non-radiative recombination losses. These results provide the significant explanation for studying non-radiation processes of carriers in the presence of the migration defects in recent experiments. Moreover, this model will be available to analyze some key performance related defects in electronic devices.
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页数:4
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