Two-stage conductivity switching of GST thin films induced by femtosecond laser radiation

被引：5

作者：

Nevzorov, A. A. ^{[1
]}

Mikhalevsky, V. A. ^{[1
]}

Eliseev, N. N. ^{[1
]}

Kiselev, A. V. ^{[1
]}

Burtsev, A. A. ^{[1
]}

Ionin, V. V. ^{[1
]}

Maliutin, A. M. ^{[1
]}

Khmelenin, D. N. ^{[2
]}

Glebov, V. N. ^{[1
]}

Lotin, A. A. ^{[1
]}

机构：

[1] RAS, ILIT RAS Branch FSRC Crystallog & Photon, Svyatoozerskaya St 1, Shatura 140700, Russia

[2] RAS, FSRC Crystallog & Photon, Leninsky Prospekt 59, Moscow 119333, Russia

来源：

OPTICS AND LASER TECHNOLOGY | 2023年 / 157卷

关键词：

Light-induced crystallization; Phase-change materials; Femtosecond laser pulse; Thin-film properties; PHASE-CHANGE MATERIALS; CRYSTALLIZATION; MEMORY; TRANSITIONS;

D O I：

10.1016/j.optlastec.2022.108773

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Crystallization of as-deposited amorphous Ge2Sb2Te5 films (180 nm) by femtosecond pulsed laser radiation have been studied using in-situ electrical resistance measurements with temporal resolution. The results show that a double pulses impact is optimal for the controllability of the crystallization process. In this case, the switching time of the film resistance is less than 100 ns and is associated with the formation of conducting crystalline paths in the material after the pulse laser impact. We have proposed a model of the electrical conductivity dynamics caused by impact of the ultrashort laser radiation, which is well related to experimental data.

引用

页数：7

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