Strain induced metal-semiconductor transition in two-dimensional topological half metals

被引:6
|
作者
You, Jing-Yang [1 ]
机构
[1] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 117551, Singapore
关键词
FERROMAGNETISM; SCHEMES;
D O I
10.1016/j.isci.2023.106312
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Spintronic applications of two-dimensional (2D) magnetic half metals and semiconductors are thought to be very promising. Here, we suggest a family of stable 2D materials Mn2X7 (X = Cl, Br, and I). The monolayer Mn2Cl7 exhibits an in-plane ferromagnetic (FM) ground state with a Curie temperature of 118 K, which is unveiled to be a 2D Weyl half semimetal with two Weyl points of opposite chirality connected by a remarkable Fermi arc. In addition, it appears that a biaxial tensile strain can lead to a metal-semiconductor phase transition as a result of the increased anomalous Jahn-Teller distortions, which raise the degeneracy of the e(g) energy level and cause a significant energy splitting. A 10% biaxial tensile strain also increases the Curie temperature to about 159 K, which originates from the enhanced Mn-Cl-Mn FM superexchange. Moreover, the metal-semiconductor transition can also be induced by a uniaxial strain. Our findings provide an idea to create 2D magnetic semiconductors through metal-semiconductor transition in half metals.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Metal-semiconductor transition of two-dimensional Mg2C monolayer induced by biaxial tensile strain
    Meng, Lingbiao
    Ni, Shuang
    Zhou, Minjie
    Zhang, Yingjuan
    Li, Zhaoguo
    Wu, Weidong
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (47) : 32086 - 32090
  • [2] Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain
    Zhang, Shengli
    Xie, Meiqiu
    Cai, Bo
    Zhang, Haijun
    Ma, Yandong
    Chen, Zhongfang
    Zhu, Zhen
    Hu, Ziyu
    Zeng, Haibo
    PHYSICAL REVIEW B, 2016, 93 (24)
  • [3] Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
    Emilio Scalise
    Michel Houssa
    Geoffrey Pourtois
    Valery Afanas’ev
    André Stesmans
    Nano Research, 2012, 5 : 43 - 48
  • [4] Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
    Scalise, Emilio
    Houssa, Michel
    Pourtois, Geoffrey
    Afanas'ev, Valery V.
    Stesmans, Andre
    NANO RESEARCH, 2012, 5 (01) : 43 - 48
  • [5] Strain induced half-metal to semiconductor transition in GdN
    Duan, CG
    Sabiryanov, RF
    Liu, JJ
    Mei, WN
    Dowben, PA
    Hardy, JR
    PHYSICAL REVIEW LETTERS, 2005, 94 (23)
  • [6] Strain-induced metal-semiconductor transition observed in atomic carbon chains
    La Torre, A.
    Botello-Mendez, A.
    Baaziz, W.
    Charlier, J. -C.
    Banhart, F.
    NATURE COMMUNICATIONS, 2015, 6
  • [7] Towards a metal-semiconductor transition in two dimensions
    Hansson, Anders
    de Brito Mota, F.
    Rivelino, R.
    CHEMICAL PHYSICS LETTERS, 2017, 679 : 127 - 131
  • [8] Computational search for two-dimensional intrinsic half-metals in transition-metal dinitrides
    Liu, Junyan
    Liu, Zhifeng
    Song, Tielei
    Cui, Xin
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (03) : 727 - 732
  • [9] Strain regulation of two-dimensional transition metal dichalcogenides
    Zhou, Lu
    Fu, Lei
    CHINESE SCIENCE BULLETIN-CHINESE, 2019, 64 (17): : 1817 - 1831
  • [10] The influence of particle shape on magnetoresistance effect of two-dimensional metal-semiconductor composites
    Xu, Jie
    Wang, Guodong
    Li, Shandong
    Shao, Weiquan
    Zhang, Xinni
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (12)