共 1 条
Theoretical Investigation of Topological Magnetic Textures in Sliding Ferroelectric CrX3 (X = Cl, Br, I) Moire Superlattices: A Multiferroic Material with Unique Magnetoelectric Coupling for Information Storage Applications
被引:3
|作者:
Sun, Wei
[1
]
Wang, Wenxuan
[2
]
Hu, Riming
[4
]
Yang, Changhong
[1
]
Li, Ling
[3
]
Huang, Shifeng
[1
]
Li, Xiaoning
[5
]
Cheng, Zhenxiang
[5
]
机构:
[1] Univ Jinan, Shandong Prov Key Lab Preparat & Measurement Bldg, Jinan 250022, Peoples R China
[2] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China
[3] Shandong Ind Ceram Res & Design Inst Co Ltd, Zibo 255049, Shandong, Peoples R China
[4] Univ Jinan, Inst Smart Mat & Engn, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[5] Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, North Wollongong, NSW 2500, Australia
基金:
中国国家自然科学基金;
关键词:
sliding ferroelectric;
moire superlattice;
topological magnetic texture;
first-principles calculations;
atomic spin dynamics simulations;
CRYSTAL;
STATES;
BILAYER;
D O I:
10.1021/acsanm.3c03153
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Two-dimensional (2D) van der Waals (vdW) materials offer unprecedented possibilities for manipulating electrical and magnetic properties through layer twisting or sliding. In this study, we investigate the stack engineering of two magnetic monolayers, CrX3 (X = Cl, Br, I), by combining first-principles calculations and atomic spin dynamics simulations. The interlayer sliding of CrX3 bilayers disrupts space inversion symmetry, resulting in the emergence of ferroelectric polarization characterized by a low energy potential barrier and polarization reversal. Notably, as the halogen atoms change from Cl to I, the interlayer exchange interaction gradually intensifies, leading to a significant enhancement in both magnetic stability and ferroelectric polarization. Moreover, when a moire superlattice is formed through small-angle twisting, the electrostatic moire potential and magnetic exchange interaction coupling through layer stacking lead to the formation of staggered polarization domains and four distinct types of topological magnetic states, which starkly contrast with the nontwisted bilayer configuration. This work provides a pioneering example of designing sliding ferroelectricity in 2D vdW magnetic bilayers, showcasing the potential of nanoscale layered multiferroic materials constructed by twisted stacking engineering for application in novel information memory devices.
引用
下载
收藏
页码:17021 / 17030
页数:10
相关论文