Dependence of quantum dot solar cell parameters on the number of quantum dot layers

被引：3
|
作者：
Gatissa, Tewodros Adaro [1 ]
Debela, Teshome Senbeta [1 ]
Ali, Belayneh Mesfin [1 ]
机构：
[1] Addis Ababa Univ, Dept Phys, POB 1176, Addis Ababa, Ethiopia
来源：
AIP ADVANCES | 2023年 / 13卷 / 07期
关键词：
V CHARACTERISTICS; EFFICIENCY;
D O I：
10.1063/5.0145361
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%. Increasing the number of layers beyond the optimum value resulted in the decrease of efficiency. The presence of InAs QD layers in the cell structure results in a significant rise of the short circuit current density from 33.4 mA/cm(2) without InAs QD to 45.4 mA/cm(2) in the presence of InAs QD. At the same time, the efficiency of the cell increased from 20.5% without InAs QD to 27.4% with InAs QD.
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页数：11
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