机构:
Int Adv Res Ctr Powder Met & New Mat ARCI, Ctr Nanomat, Hyderabad, India
Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad, IndiaIndian Inst Technol Hyderabad, Ctr Interdisciplinary Programs, Integrated Sensor Syst, Hyderabad, India
Reddy, Kumaar Swamy
[2
,3
]
Badhulika, Sushmee
论文数: 0引用数: 0
h-index: 0
机构:
Indian Inst Technol Hyderabad, Ctr Interdisciplinary Programs, Integrated Sensor Syst, Hyderabad, India
Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad, IndiaIndian Inst Technol Hyderabad, Ctr Interdisciplinary Programs, Integrated Sensor Syst, Hyderabad, India
Badhulika, Sushmee
[1
,3
]
机构:
[1] Indian Inst Technol Hyderabad, Ctr Interdisciplinary Programs, Integrated Sensor Syst, Hyderabad, India
[2] Int Adv Res Ctr Powder Met & New Mat ARCI, Ctr Nanomat, Hyderabad, India
[3] Indian Inst Technol Hyderabad, Dept Elect Engn, Hyderabad, India
Self-powered heterostructure based photodetectors are of great research interest owing to their zero-power consumption, enhanced light-matter interaction, and the ability to respond in harsh environmental conditions. Selenium (Se) nanoparticles have been recently explored in photodetectors due to their high absorption coefficient and superior light-sensing ability. However, most reported Selenium based photoconductors utilize sophisticated device fabrication methodology, requiring regulated environmental conditions, elevated temperature and face flexibility issues. This work demonstrates a discrete(localized) heterojunction of exfoliated Selenium decorated on hydrothermally grown MoS2/paper-based high-performance, flexible, and self-powered photodetector. X-ray Diffraction and Raman Spectroscopy studies reveal the presence of hexagonal Se and the SEM image shows the uniformly grown MoS2 on cellulose paper. It also confirms the presence of Se clustered nanoparticles. The hybrid heterostructure device displays broadband response in the Vis-NIR region. Upon light illumination, a built-in field is generated due to the efficient separation of the charge carriers, making the fabricated device to operate at zero bias. The as-fabricated device exhibits superior responsivity of 0.14 A/W and 0.49 A/W and detectivity of 4.55 x 10(11) Jones (intensity- 35.8 mW/cm(2)) and 5.01 x 10(10) Jones (intensity- 30.08 mW/cm(2)) upon Vis and NIR irradiation, respectively, at no bias. This superior performance is asserted to the peak absorption of Se nanoparticles in the NIR region. The device also showed superior resistance to bending stress and retained its original characteristics even after multiple bending cycles (similar to 1050). Hence, with this facile device fabrication and simple device architecture strategy, this work paves the way for developing high-performance tensile photodetectors.
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Feng, Pu
He, Sixian
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
He, Sixian
Zeng, Zhi
论文数: 0引用数: 0
h-index: 0
机构:
Harbin Inst Technol Univ, Sch Mat Sci & Engn, Dept Optoelect Informat Sci, Harbin 150001, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Zeng, Zhi
Dang, Congcong
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Dang, Congcong
Li, Ming
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Li, Ming
Zhao, Liancheng
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Zhao, Liancheng
Wang, Dongbo
论文数: 0引用数: 0
h-index: 0
机构:
Harbin Inst Technol Univ, Sch Mat Sci & Engn, Dept Optoelect Informat Sci, Harbin 150001, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Wang, Dongbo
Gao, Liming
论文数: 0引用数: 0
h-index: 0
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
机构:
Purdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USAPurdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USA
de Medeiros, Marina Sala
Chanci, Daniela
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USAPurdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USA
Chanci, Daniela
Martinez, Ramses V.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USA
Purdue Univ, Weldon Sch Biomed Engn, 206 S Martin Jischke Dr, W Lafayette, IN 47907 USAPurdue Univ, Sch Ind Engn, 315 N Grant St, W Lafayette, IN 47907 USA