X-Ray Diffraction of Ramp-Compressed Silicon to 390 GPa

被引：3
|
作者：
Gong, X. [1 ,2 ]
Polsin, D. N. [1 ,2 ]
Paul, R. [1 ,2 ]
Henderson, B. J. [1 ,3 ]
Eggert, J. H. [4 ]
Coppari, F. [4 ]
Smith, R. F. [4 ]
Rygg, J. R. [1 ,2 ,3 ]
Collins, G. W. [1 ,2 ,3 ]
机构：
[1] Univ Rochester, Lab Laser Energet, Rochester, NY 14623 USA
[2] Univ Rochester, Dept Mech Engn, Rochester, NY 14627 USA
[3] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA
[4] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
PHYSICAL REVIEW LETTERS | 2023年 / 130卷 / 07期
基金：
美国国家科学基金会;
关键词：
HIGH-PRESSURE PHASE; EQUATION-OF-STATE; TRANSITION; CODE; SI;
D O I：
10.1103/PhysRevLett.130.076101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon (Si) exhibits a rich collection of phase transitions under ambient-temperature isothermal and shock compression. This report describes in situ diffraction measurements of ramp-compressed Si between 40 and 389 GPa. Angle-dispersive x-ray scattering reveals that Si assumes an hexagonal close-packed (hcp) structure between 40 and 93 GPa and, at higher pressure, a face-centered cubic structure that persists to at least 389 GPa, the highest pressure for which the crystal structure of Si has been investigated. The range of hcp stability extends to higher pressures and temperatures than predicted by theory.
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页数：6
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