Delocalization and re-entrant localization of flat-band states in non-Hermitian disordered lattice models with flat bands

被引:1
|
作者
Kim, Sangbum [1 ]
Kim, Kihong [2 ,3 ]
机构
[1] Ajou Univ, Res Inst Basic Sci, Suwon 16499, South Korea
[2] Ajou Univ, Dept Phys, Suwon 16499, South Korea
[3] Korea Inst Adv Study, Sch Phys, Seoul 02455, South Korea
来源
基金
新加坡国家研究基金会;
关键词
ANDERSON LOCALIZATION;
D O I
10.1093/ptep/ptac162
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a numerical study of Anderson localization in disordered non-Hermitian lattice models with flat bands. Specifically, we consider 1D stub and 2D kagome lattices that have a random scalar potential and a uniform imaginary vector potential and calculate the spectra of the complex energy, the participation ratio, and the winding number as a function of the strength of the imaginary vector potential, h. The flat-band states are found to show a double transition from localized to delocalized and back to localized states with h, in contrast to the dispersive-band states going through a single delocalization transition. When h is sufficiently small, all flat-band states are localized. As h increases above a certain critical value h(1), some pairs of flat-band states become delocalized. The participation ratio associated with them increases substantially and their winding numbers become nonzero. As h increases further, more and more flat-band states get delocalized until the fraction of the delocalized states reaches a maximum. For larger h values, a re-entrant localization takes place and, at another critical value h(2), all flat-band states return to compact localized states with very small participation ratios and zero winding numbers. This re-entrant localization transition, which is due to the interplay among disorder, non-hermiticity, and the flat band, is a phenomenon occurring in many models having an imaginary vector potential and a flat band simultaneously. We explore the spatial characteristics of the flat-band states by calculating the local density distribution.
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页数:11
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