Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors
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作者:
Liu, Yang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Liu, Yang
[1
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Fu, Chen
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Fu, Chen
[1
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Jiang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Jiang, Guangyuan
[1
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Zhang, Guangyuan
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Zhang, Guangyuan
[1
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Yang, Guang
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Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Yang, Guang
[1
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Lv, Yuanjie
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lv, Yuanjie
[2
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Lin, Zhaojun
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Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R ChinaShandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
Lin, Zhaojun
[3
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机构:
[1] Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.
机构:
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Cui, Peng
Mo, Jianghui
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Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Mo, Jianghui
Fu, Chen
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Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Fu, Chen
Lv, Yuanjie
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机构:
Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit A, Shijiazhuang 050051, Hebei, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Lv, Yuanjie
Liu, Huan
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机构:
Shandong Univ, Sch Math, Jinan 250100, Shandong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Liu, Huan
Cheng, Aijie
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Shandong Univ, Sch Math, Jinan 250100, Shandong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Cheng, Aijie
Luan, Chongbiao
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机构:
CAEP, Inst Fluid Phys, Key Lab Pulsed Power, Mianyang 621999, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Luan, Chongbiao
Zhou, Yang
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机构:
China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Zhou, Yang
Dai, Gang
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机构:
China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China
Dai, Gang
Lin, Zhaojun
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机构:
Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R ChinaShandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China