Effect of device size on conduction channel effective width and polarization Coulomb field scattering intensity of split-gate AlGaN/GaN heterostructure field-effect transistors

被引:0
|
作者
Liu, Yang [1 ]
Fu, Chen [1 ]
Jiang, Guangyuan [1 ]
Zhang, Guangyuan [1 ]
Yang, Guang [1 ]
Lv, Yuanjie [2 ]
Lin, Zhaojun [3 ]
机构
[1] Shandong Jiaotong Univ, Sch Informat Sci & Elect Engn, Jinan 250357, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
关键词
ELECTRON-MOBILITY; GAS;
D O I
10.1063/5.0172695
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, the ungated AlGaN/GaN devices with special mesa structures were designed. The hypothesis of effective width expansion was tested experimentally by using ungated samples with different sizes, and an empirical expression for calculating the conduction channel effective width was given according to the experimental results. Finally, split-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths were prepared, and the channel electron mobility of split-gate samples was calculated by using the empirical expression and polarization Coulomb field (PCF) scattering theoretical model. The results showed that, for split-gate AlGaN/GaN HFETs, with the increase in the gate length, the total amount of additional polarization charges underneath the gate increases, resulting in the enhancement of the PCF scattering intensity.
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页数:8
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