A Multi-Bit Quantization Low-Latency Voltage Sense Amplifier Applied in RRAM Computing-in-Memory Macro Circuits

被引：1

作者：

Hu, Wei ^{[1
]}

Zhang, Hangze ^{[1
]}

Wei, Rongshan ^{[1
]}

Chen, Qunchao ^{[1
]}

机构：

[1] Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350116, Peoples R China

来源：

ELECTRONICS | 2024年 / 13卷 / 02期

基金：

中国国家自然科学基金;

关键词：

RRAM; computing-in-memory; voltage sense amplifier; low latency; CMOS;

D O I：

10.3390/electronics13020356

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Conventional sense amplifiers limit the performance of current RRAM computing-in-memory (CIM) macro circuits, resulting in high latency and energy consumption. This paper introduces a multi-bit quantization technology low-latency voltage sense amplifier (MQL-VSA). Firstly, the multi-bit quantization technology enhances circuit quantization efficiency, reducing the number of operational states in conventional VSA. Secondly, by simplifying the sequential logic circuits in conventional VSA, the complexity of sequential control signals is reduced, further diminishing readout latency. Experimental results demonstrate that the MQL-VSA achieves a 1.40-times decrease in readout latency and a 1.28-times reduction in power consumption compared to conventional VSA. Additionally, an 8-bit input, 8-bit weight, 14-bit output macro circuit utilizing MQL-VSA exhibited a 1.11times latency reduction and 1.04-times energy savings.

引用

页数：16