MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector (vol 604, 154485, 2022)

被引：0
|
作者：
Seo, Wondeok [1 ]
Park, Woojin [1 ,2 ]
Seo, Hyun Young [1 ,2 ]
Oh, Seyoung [1 ,2 ]
Kwon, Ojun [1 ,2 ]
Jeong, Soo Hong [1 ,2 ]
Kim, Do Hyeong [1 ,2 ]
Kim, Min Jeong [1 ]
Lee, Sang Kyung [3 ]
Lee, Byoung Hun [4 ]
Cho, Byungjin [1 ,2 ]
机构：
[1] Chungbuk Natl Univ, Dept Adv Mat Engn, Chungdae ro 1, Cheongju 28644, Chungbuk, South Korea
[2] Chungbuk Natl Univ, Dept Urban Energy Environm Engn, Chungdae ro 1, Cheongju 28644, Chungbuk, South Korea
[3] Alpha Graphene Inc, 77 Cheongam ro, Pohang Si 37673, Gyeongsangbuk D, South Korea
[4] Pohang Univ Sci & Technol, Dept Elect Engn, 77 Cheongam ro, Pohang Si 37673, Gyeongsangbuk D, South Korea
来源：
APPLIED SURFACE SCIENCE | 2023年 / 607卷
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1016/j.apsusc.2022.155145
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页数：1
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