Fabrication of sub-5 nm uniform zirconium oxide films on corrugated copper substrates by a scalable polymer brush assisted deposition method

被引:0
|
作者
Yadav, Pravind [1 ]
Singh, Sajan [1 ]
Prochukhan, Nadezda [1 ]
Davo-Quinonero, Arantxa [1 ]
Conway, Jim [2 ]
Gatensby, Riley [1 ]
Padmanabhan, Sibu C. [1 ]
Snelgrove, Matthew [3 ]
McFeely, Caitlin [3 ]
Shiel, Kyle [3 ]
O'Connor, Robert [3 ]
McGlynn, Enda [2 ,3 ]
Turner, Miles [2 ]
Lundy, Ross [1 ]
Morris, Michael A. [1 ]
机构
[1] Trinity Coll Dublin, Sch Chem, AMBER CRANN, Dublin, Ireland
[2] Dublin City Univ, Natl Ctr Plasma Sci & Technol, Dublin, Ireland
[3] Dublin City Univ, Sch Phys Sci, Dublin, Ireland
基金
爱尔兰科学基金会;
关键词
Polymer brush monolayer; Selective Infiltration; High-? dielectric; Metal-oxide; Microelectronics; ATOMIC LAYER DEPOSITION; BLOCK-COPOLYMER; POLY(METHYL METHACRYLATE); SELECTIVE DEPOSITION; THIN-FILMS; XPS; NANOSTRUCTURES; INFILTRATION; TRIMETHYLALUMINUM; OXIDATION;
D O I
10.1016/j.apsusc.2023.157329
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate a polymer brush assisted approach for the fabrication of continuous zirconium oxide (ZrO2) films over large areas with high uniformity (pin-hole free) on copper (Cu) substrates. This approach involves the use of a thiol-terminated polymethyl methacrylate brush (PMMA-SH) as the template layer for the selective infiltration of zirconium oxynitrate (ZrN2O7). The preparation of a highly uniform covalently grafted polymer monolayer on the Cu substrate is the critical factor in fabricating a metal oxide film of uniform thickness across the surface. Infiltration is reliant on the chemical interactions between the polymer functional group and the metal precursor. A following reductive H2 plasma treatment process results in ZrO2 film formation whilst the surface Cu2O passive oxide layer was reduced to a Cu/Cu2O interface. Fundamental analysis of the infiltration process and the resulting ZrO2 film was determined by XPS, and GA-FTIR. Results derived from these techniques confirm the inclusion of the ZrN2O7 into the polymer films. Cross-sectional transmission electron microscopy and energy dispersive X-ray mapping analysis corroborate the formation of ZrO2 layer at Cu substrate. We believe that this quick and facile methodology to prepare ZrO2 films is potentially scalable to other high-? dielectric materials of high interest in microelectronic applications.
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页数:8
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