This article aims at preparing ZnO nanoparticles and doping with nitrogen (N) and carbon (C) nonmetals via sol-gel method followed by the calcination in N2 and air media to mitigate the fast electron-hole pairs recombination drawbacks and improve the visible light photocatalytic activity of pure ZnO under sunlight irradiation. The influence of dopant content of N-and C-N doped ZnO on the photodegradation of methylene blue (MB) dye was investigated. To compare doped samples properties with ZnO bare, techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), fourier transform infrared (FTIR), Brunauer, Emmett and Teller (BET) surface area, and UV-Vis diffuse reflectance spectroscopy (DRS) were employed. Wurtize hexagonal structure of ZnO with good crystallinity of nanoparticles (NPs) ranged between 15.5 and 45.8 nm was confirmed by XRD. However, entering N into ZnO lattice decreased the crystallite size whereas doping with C-N enhanced the crystallite size of ZnO. Through SEM, ZnO NPs appeared as spherical morphology and FTIR showed the characteristic absorption bands related to Zn-O stretching and bending vibration modes with symmetric stretching vibration of O-C=O and-C-O groups were detected in FTIR. The bandgap value of ZnO was decreased from 3.07eV to 2.83eV upon doping with 40%N/ZnO(air). Pure ZnO exhibited 100% degradation of MB at 180 min, and ZnO doped with the highest concentrations of N and C-N dopants showed a full degradation of MB dye at 60 and 90 min, respectively. Thereof, the 40% N/ ZnO(air) material exhibited the higher visible-light activity compared with 40%C-N/ZnO(N2), where a complete photodegradation of MB dye was obtained at 60min.This superior photoactivity for 40%N/ZnO catalyst is due to their capability in reducing the electron-hole pair recombination arising from its smaller bandgap energy value.
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Ayya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Ayya Nadar Janaki Ammal Coll, PG Dept Phys, Sivakasi, Tamil Nadu, IndiaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Hemalatha, P.
Karthick, S. N.
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Pusan Natl Univ, Sch Elect & Comp Engn, Busan, South KoreaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Karthick, S. N.
Hemalatha, K. V.
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Coimbatore Inst Technol, Dept Chem, Coimbatore, Tamil Nadu, IndiaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Hemalatha, K. V.
Yi, Moonsuk
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Pusan Natl Univ, Sch Elect & Comp Engn, Busan, South KoreaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Yi, Moonsuk
Kim, Hee-Je
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Pusan Natl Univ, Sch Elect & Comp Engn, Busan, South KoreaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Kim, Hee-Je
Alagar, M.
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Ayya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
Ayya Nadar Janaki Ammal Coll, PG Dept Phys, Sivakasi, Tamil Nadu, IndiaAyya Nadar Janaki Ammal Coll, Res Ctr, Sivakasi, Tamil Nadu, India
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Bahauddin Zakariya Univ, Dept Phys, Multan 60800, PakistanZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Iqbal, Z.
Hong, Zhanglian
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Hong, Zhanglian
Yang, Jingxia
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Yang, Jingxia
Zhang, Yuewei
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhang, Yuewei
Khalid, N. R.
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
Bahauddin Zakariya Univ, Dept Phys, Multan 60800, PakistanZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
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Univ Jeddah, Coll Sci & Arts Khulis, Dept Chem, POB 355, Jeddah, Saudi ArabiaUniv Jeddah, Coll Sci & Arts Khulis, Dept Chem, POB 355, Jeddah, Saudi Arabia
Alzahrani, Hassan A. H.
Almulaiky, Yaaser Q.
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Univ Jeddah, Coll Sci & Arts Khulis, Dept Chem, POB 355, Jeddah, Saudi ArabiaUniv Jeddah, Coll Sci & Arts Khulis, Dept Chem, POB 355, Jeddah, Saudi Arabia
Almulaiky, Yaaser Q.
Alsaiari, Abdulmohsen O.
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Coll Engn King Abdulaziz Univ, Mech Engn Dept, POB 80200, Jeddah 21589, Saudi Arabia
King Abdulaziz Univ, Ctr Excellence Desalinat Technol, POB 80200, Jeddah 21589, Saudi ArabiaUniv Jeddah, Coll Sci & Arts Khulis, Dept Chem, POB 355, Jeddah, Saudi Arabia
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Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
Fac Sci Gafsa, Dept Phys, Gafsa 2112, TunisiaTunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
Larbi, T.
Amara, M. A.
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Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, TunisiaTunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
Amara, M. A.
Ouni, B.
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Tunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, TunisiaTunis El Manar Univ, Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia