Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

被引：0

作者：

Mathew, S. ^{[1
]}

Reiprich, J. ^{[1
]}

Narasimha, S. ^{[1
]}

Abedin, S. ^{[1
]}

Kurtash, V. ^{[1
]}

Thiele, S. ^{[1
]}

Scheler, T. ^{[2
]}

Haehnlein, B. ^{[3
]}

Schaaf, P. ^{[2
]}

Jacobs, H. O. ^{[1
]}

Pezoldt, J. ^{[1
]}

机构：

[1] TU Ilmenau, FG Nanotechnol, Inst Mikro & Nanotechnol MacroNano, Inst Mikro & Nanoelekt,Inst Werkstofftech, D-98684 Ilmenau, Germany

[2] TU Ilmenau, FG Werkstoffe Elektrotech, Inst Werkstofftech, Inst Mikro & Nanotechnol MacroNano, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany

[3] Tech Univ Ilmenau, Inst Phys, Inst Mikro & Nanotechnol MacroNano, FG Tech Phys 1, D-98684 Ilmenau, Germany

来源：

AIP ADVANCES | 2023年 / 13卷 / 09期

关键词：

D O I：

10.1063/5.0165868

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

引用

页数：7

共 50 条

[1] A strained organic field-effect transistor with a gate-tunable superconducting channel
Hiroshi M. Yamamoto
Masaki Nakano
Masayuki Suda
Yoshihiro Iwasa
Masashi Kawasaki
Reizo Kato
[J]. Nature Communications, 4
[2] A strained organic field-effect transistor with a gate-tunable superconducting channel
Yamamoto, Hiroshi M.
Nakano, Masaki
Suda, Masayuki
Iwasa, Yoshihiro
Kawasaki, Masashi
Kato, Reizo
[J]. NATURE COMMUNICATIONS, 2013, 4
[3] Gate-Tunable Surface Processes on a Single-Nanowire Field-Effect Transistor
Mubeen, Syed
Moskovits, Martin
[J]. ADVANCED MATERIALS, 2011, 23 (20) : 2306 - +
[4] Gate-Tunable Field-Compatible Fluxonium
Pita-Vidal, Marta
Bargerbos, Arno
Yang, Chung-Kai
van Woerkom, David J.
Pfaff, Wolfgang
Haider, Nadia
Krogstrup, Peter
Kouwenhoven, Leo P.
de Lange, Gijs
Kou, Angela
[J]. PHYSICAL REVIEW APPLIED, 2020, 14 (06):
[5] Gate-Tunable Near-Field Heat Transfer
Papadakis, Georgia T.
Zhao, Bo
Buddhiraju, Siddharth
Fan, Shanhui
[J]. ACS PHOTONICS, 2019, 6 (03): : 709 - 719
[6] Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure
Na, Junhong
Kim, Youngwook
Smet, Jurgen H.
Burghard, Marko
Kern, Klaus
[J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (23) : 20973 - 20978
[7] Features of gate-tunable and photon-field-controlled optoelectronic processes in a molecular junction: Application to a ZnPc-based transistor
Petrov, Elmar G.
Shevchenko, Yevgen V.
Gorbach, Victor V.
Lyubchik, Svetlana
Lyubchik, Andriy
[J]. AIP ADVANCES, 2022, 12 (10)
[8] Gate-Tunable Potential Barrier on Dual-Gate Graphene Transistor with Fluorocarbon Thin Film
Yi, Yoonhyuck
Yun, Yoojoo
Cho, Eunmi
Jeon, Jinho
Lee, Hyunkyung
Kim, Byeongwan
Ha, Dong Han
Lee, Sang-Jin
Kang, Haeyong
[J]. ADVANCED MATERIALS INTERFACES, 2023, 10 (11)
[9] Reduction of Hysteresis in Organic Field-Effect Transistor by Ferroelectric Gate Dielectric
Chen, Xiangyu
Ou-Yang, Wei
Weis, Martin
Taguchi, Dai
Manaka, Takaaki
Iwamotoy, Mitsumasa
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
[10] Ambipolar organic field-effect transistor using gate insulator hysteresis
Mizuno, E
Taniguchi, M
Kawai, T
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3

← 1 2 3 4 5 →